Inventor · disambiguated record
Somesh Peri
Also filed as: PERI SOMESH
16 granted patents·377 citations·filing 2015–2016
95Inventor score
Top patents by PatentIndex Score
16 records- 0198US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 0298US9793139B2Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word linesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·38 cites·26 claims
- 0398US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 0498US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 0598US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 0698US9646975B2Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·37 cites·17 claims
- 0797US9984963B2Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 29, 2018·37 cites·17 claims
- 0897US9576966B1Cobalt-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 21, 2017·25 cites·23 claims
- 0996US9806089B2Method of making self-assembling floating gate electrodes for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·19 cites·14 claims
- 1096US9754958B2Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 5, 2017·17 cites·13 claims
- 1196US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 1295US9515079B2Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 6, 2016·13 cites·13 claims
- 1393US10355139B2Three-dimensional memory device with amorphous barrier layer and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 16, 2019·11 cites·11 claims
- 1490US10622368B2Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 14, 2020·7 cites·15 claims
- 1589US9812463B2Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·6 cites·26 claims
- 1679US9893081B1Ridged word lines for increasing control gate lengths in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 13, 2018·3 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →