Inventor · disambiguated record
Sony Varghese
Also filed as: VARGHESE SONY
53 granted patents·17 pending applications·57 citations·filing 2011–2025
97Inventor score
Files withAPPLIED MATERIALS INC37VARIAN SEMICONDUCTOR EQUIPMENT ASS INC19MICRON TECHNOLOGY INC12VARGHESE SONY2
Top patents by PatentIndex Score
70 records- 0197US11152373B1Structures and methods for forming dynamic random-access devicesAPPLIED MATERIALS INC·Filed 2020·Granted Oct 19, 2021·6 cites·20 claims
- 0296US11380691B1CMOS over array of 3-D DRAM deviceAPPLIED MATERIALS INC·Filed 2021·Granted Jul 5, 2022·3 cites·20 claims
- 0394US10403738B1Techniques for improved spacer in nanosheet deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·11 cites·20 claims
- 0493US11462546B2Dynamic random access device including two-dimensional array of fin structuresVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Oct 4, 2022·3 cites·14 claims
- 0593US10403552B1Replacement gate formation with angled etch and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·7 cites·20 claims
- 0689US10685865B2Method and device for power rail in a fin type field effect transistorVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 16, 2020·5 cites·18 claims
- 0789US10607847B1Gate all around device and method of formation using angled ionsAPPLIED MATERIALS INC·Filed 2018·Granted Mar 31, 2020·4 cites·15 claims
- 0887US11749564B2Techniques for void-free material depositionsAPPLIED MATERIALS INC·Filed 2020·Granted Sep 5, 2023·2 cites·16 claims
- 0986US9865578B2Methods of manufacturing multi-die semiconductor device packages and related assembliesMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 9, 2018·4 cites·21 claims
- 1083US10811304B2Increased isolation of diffusion breaks in FinFET devices using an angled etchVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Oct 20, 2020·3 cites·9 claims
- 1181US10103134B2Methods of manufacturing multi-die semiconductor device packages and related assembliesMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 16, 2018·2 cites·20 claims
- 1280US11956978B2Techniques and device structure based upon directional seeding and selective depositionAPPLIED MATERIALS INC·Filed 2020·Granted Apr 9, 2024·1 cites·13 claims
- 1379US2024297068A1Methods of Forming Material Within Openings Extending into a Semiconductor Construction, and Semiconductor Constructions Having Fluorocarbon MaterialMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1476US2025300095A1Stress and overlay management for semiconductor processingAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1575US10510610B2Structure and method of forming fin device having improved fin linerVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Dec 17, 2019·1 cites·16 claims
- 1673US12354973B2Stress and overlay management for semiconductor processingAPPLIED MATERIALS INC·Filed 2022·Granted Jul 8, 2025·0 cites·13 claims
- 1773US12020979B2Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon materialMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 25, 2024·0 cites·29 claims
- 1873US10607999B2Techniques and structure for forming dynamic random access deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Mar 31, 2020·1 cites·16 claims
- 1972US11700721B2Structures and methods for forming dynamic random-access devicesAPPLIED MATERIALS INC·Filed 2021·Granted Jul 11, 2023·0 cites·15 claims
- 2072US9412706B1Engineered carrier wafersMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 9, 2016·3 cites·24 claims
- 2171US11569242B2DRAM memory device having angled structures with sidewalls extending over bitlinesAPPLIED MATERIALS INC·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 2271US10692872B2Device structure for forming semiconductor device having angled contactsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Jun 23, 2020·1 cites·12 claims
- 2370US12131948B2Techniques for void-free material depositionsAPPLIED MATERIALS INC·Filed 2023·Granted Oct 29, 2024·0 cites·16 claims
- 2470US11515198B2Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 29, 2022·0 cites·34 claims
- 2569US11980021B2CMOS over array of 3-D DRAM deviceAPPLIED MATERIALS INC·Filed 2022·Granted May 7, 2024·0 cites·15 claims
- 2669US2024040808A1Techniques and device structure based upon directional seeding and selective depositionAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2767US12464702B2Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGeAPPLIED MATERIALS INC·Filed 2021·Granted Nov 4, 2025·0 cites·14 claims
- 2867US10886279B2Device structure for forming semiconductor device having angled contactsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Jan 5, 2021·0 cites·20 claims
- 2967US2025227915A1Methods and devices for reduced floating body effect in advanced dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3067US2025098142A1Double channel single inner gate three-dimensional (3d) dynamic random-access memory (dram) devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3166US12217974B2Localized stress modulation by implant to back of waferAPPLIED MATERIALS INC·Filed 2021·Granted Feb 4, 2025·0 cites·14 claims
- 3265US10930735B2Gate all around device and method of formation using angled ionsAPPLIED MATERIALS INC·Filed 2020·Granted Feb 23, 2021·0 cites·7 claims
- 3364US2025107068A1Dual work function word line for 4f2APPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3464US2024341090A1Dynamic random access memory (dram) storage node contactAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3564US2024334683A1Memory devices and methods of forming the sameAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3663US12482749B2L-type wordline connection structure for three-dimensional memoryAPPLIED MATERIALS INC·Filed 2022·Granted Nov 25, 2025·0 cites·9 claims
- 3763US11532483B2Spacer sculpting for forming semiconductor devicesVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Dec 20, 2022·0 cites·6 claims
- 3863US10971403B2Structure and method of forming fin device having improved fin linerVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Apr 6, 2021·0 cites·14 claims
- 3963US2025081432A1Gate all around 4f2 dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4063US2025140569A1Localized stress modulation by implant to back of waferAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 4163US2025126774A13-d dram wordline partition and staircase contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4262US12477723B2Three dimensional memory device and method of fabricationAPPLIED MATERIALS INC·Filed 2022·Granted Nov 18, 2025·0 cites·11 claims
- 4362US11217491B2Replacement gate formation with angled etch and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 4462US10763155B2Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 1, 2020·0 cites·18 claims
- 4562US2025098149A1Ultra-thin body array transistor for 4f2APPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4661US11037788B2Integration of device regionsAPPLIED MATERIALS INC·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 4761US11018138B2Methods for forming dynamic random-access devices by implanting a drain through a spacer opening at the bottom of angled structuresAPPLIED MATERIALS INC·Filed 2019·Granted May 25, 2021·0 cites·15 claims
- 4860US10998221B2Semiconductor constructions having fluorocarbon materialMICRON TECHNOLOGY INC·Filed 2017·Granted May 4, 2021·0 cites·27 claims
- 4960US2025167001A1Patterning processes utilizing directional depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 5058US11974423B2Replacement channel process for three-dimensional dynamic random access memoryAPPLIED MATERIALS INC·Filed 2021·Granted Apr 30, 2024·0 cites·19 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →