Inventor · disambiguated record
Souichi Yoshida
Also filed as: YOSHIDA SOUICHI
14 granted patents·53 citations·filing 2011–2022
89Inventor score
Top patents by PatentIndex Score
14 records- 0192US10381225B2Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and heliumFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 13, 2019·10 cites·14 claims
- 0290US9536875B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Jan 3, 2017·9 cites·12 claims
- 0389US8502345B2Reverse-conducting insulated gate bipolar transistorNEMOTO MICHIO·Filed 2011·Granted Aug 6, 2013·16 cites·10 claims
- 0487US9023692B2Semiconductor device and semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2013·Granted May 5, 2015·11 cites·12 claims
- 0574US10658360B2Semiconductor device with an insulated-gate bipolar transistor region and a diode regionFUJI ELECTRIC CO LTD·Filed 2017·Granted May 19, 2020·2 cites·3 claims
- 0672US10128345B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 13, 2018·2 cites·13 claims
- 0771US9614106B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Apr 4, 2017·2 cites·7 claims
- 0868US10629678B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 21, 2020·1 cites·13 claims
- 0967US11508581B2Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and heliumFUJI ELECTRIC CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·12 claims
- 1065US11869961B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·9 claims
- 1161US10840099B2Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and heliumFUJI ELECTRIC CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·3 claims
- 1252US11264490B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 1, 2022·0 cites·13 claims
- 1344US10884877B2Information processing device, information processing method, and non-transitory computer readable mediumPFU LTD·Filed 2018·Granted Jan 5, 2021·0 cites·5 claims
- 1435US9911733B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 6, 2018·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →