Inventor · disambiguated record
Stephen W. Bedell
Also filed as: BEDELL III STEPHEN W · BEDELL STEPHEN · BEDELL STEPHEN W · BEDELL STEPHEN WALTER
347 granted patents·72 pending applications·2,340 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
419 records- 0199US7892945B2Nanowire mesh device and method of fabricating sameIBM·Filed 2010·Granted Feb 22, 2011·97 cites·13 claims
- 0298US8912020B2Integrating active matrix inorganic light emitting diodes for display devicesBEDELL STEPHEN W·Filed 2011·Granted Dec 16, 2014·47 cites·20 claims
- 0398US8860005B1Thin light emitting diode and fabrication methodIBM·Filed 2013·Granted Oct 14, 2014·18 cites·16 claims
- 0498US8247261B2Thin substrate fabrication using stress-induced substrate spallingBEDELL STEPHEN W·Filed 2010·Granted Aug 21, 2012·55 cites·8 claims
- 0598US8169025B2Strained CMOS device, circuit and method of fabricationBEDELL STEPHEN W·Filed 2010·Granted May 1, 2012·69 cites·24 claims
- 0698US7790495B2Optoelectronic device with germanium photodetectorIBM·Filed 2007·Granted Sep 7, 2010·81 cites·10 claims
- 0798US7358166B2Relaxed, low-defect SGOI for strained Si CMOS applicationsIBM·Filed 2005·Granted Apr 15, 2008·62 cites·23 claims
- 0897US9739728B1Automatic defect detection and classification for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Aug 22, 2017·16 cites·19 claims
- 0997US9666669B1Superlattice lateral bipolar junction transistorIBM·Filed 2015·Granted May 30, 2017·12 cites·15 claims
- 1097US9096050B2Wafer scale epitaxial graphene transferIBM·Filed 2013·Granted Aug 4, 2015·34 cites·18 claims
- 1197US9064722B2Breakdown voltage multiplying integration schemeBEDELL STEPHEN W·Filed 2012·Granted Jun 23, 2015·27 cites·5 claims
- 1297US8828138B2FET nanopore sensorBEDELL STEPHEN W·Filed 2010·Granted Sep 9, 2014·25 cites·13 claims
- 1397US8486776B2Strained devices, methods of manufacture and design structuresBEDELL STEPHEN W·Filed 2010·Granted Jul 16, 2013·29 cites·20 claims
- 1497US7968459B2Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistorsIBM·Filed 2008·Granted Jun 28, 2011·104 cites·21 claims
- 1597US7893492B2Nanowire mesh device and method of fabricating sameIBM·Filed 2009·Granted Feb 22, 2011·76 cites·10 claims
- 1696US10777842B2Rechargeable lithium-ion battery with an anode structure containing a porous regionIBM·Filed 2018·Granted Sep 15, 2020·8 cites·21 claims
- 1796US10002856B1Micro-LED array transferIBM·Filed 2017·Granted Jun 19, 2018·13 cites·16 claims
- 1896US9991408B1Monolithically integrated high voltage photovoltaics and light emitting diode with textured surfaceIBM·Filed 2017·Granted Jun 5, 2018·9 cites·5 claims
- 1996US9985164B1Monolithically integrated high voltage photovoltaics and light emitting diode with textured surfaceIBM·Filed 2017·Granted May 29, 2018·9 cites·15 claims
- 2096US9570295B1Protective capping layer for spalled gallium nitrideIBM·Filed 2016·Granted Feb 14, 2017·10 cites·20 claims
- 2196US9293476B2Integrating active matrix inorganic light emitting diodes for display devicesIBM·Filed 2014·Granted Mar 22, 2016·19 cites·13 claims
- 2296US8450184B2Thin substrate fabrication using stress-induced spallingBEDELL STEPHEN W·Filed 2012·Granted May 28, 2013·17 cites·9 claims
- 2396US8178430B2N-type carrier enhancement in semiconductorsKIM JEE HWAN·Filed 2009·Granted May 15, 2012·115 cites·9 claims
- 2496US8124470B1Strained thin body semiconductor-on-insulator substrate and deviceBEDELL STEPHEN W·Filed 2010·Granted Feb 28, 2012·22 cites·17 claims
- 2596US6991998B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2004·Granted Jan 31, 2006·101 cites·18 claims
- 2695US10032973B1Magnetically guided chiplet displacementIBM·Filed 2017·Granted Jul 24, 2018·10 cites·13 claims
- 2795US9748353B2Method of making a gallium nitride deviceIBM·Filed 2015·Granted Aug 29, 2017·9 cites·15 claims
- 2895US9726634B1Superhydrophobic electrode and biosensing device using the sameIBM·Filed 2016·Granted Aug 8, 2017·5 cites·20 claims
- 2995US8368143B2Strained thin body semiconductor-on-insulator substrate and deviceIBM·Filed 2011·Granted Feb 5, 2013·19 cites·8 claims
- 3095US8354694B2CMOS transistors with stressed high mobility channelsIBM·Filed 2010·Granted Jan 15, 2013·32 cites·25 claims
- 3194US9502420B1Structure and method for highly strained germanium channel fins for high mobility pFINFETsIBM·Filed 2015·Granted Nov 22, 2016·10 cites·17 claims
- 3294US9455179B1Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesivesIBM·Filed 2015·Granted Sep 27, 2016·8 cites·20 claims
- 3394US7999344B2Optoelectronic device with germanium photodetectorIBM·Filed 2010·Granted Aug 16, 2011·17 cites·14 claims
- 3494US6855436B2Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion annealIBM·Filed 2003·Granted Feb 15, 2005·50 cites·11 claims
- 3593US10978631B2Combined dolan bridge and quantum dot josephson junction in seriesIBM·Filed 2019·Granted Apr 13, 2021·5 cites·7 claims
- 3693US10396182B2Silicon germanium-on-insulator formation by thermal mixingIBM·Filed 2016·Granted Aug 27, 2019·6 cites·11 claims
- 3793US10079341B1Three-terminal non-volatile multi-state memory for cognitive computing applicationsIBM·Filed 2017·Granted Sep 18, 2018·13 cites·18 claims
- 3893US9741532B1Multi-beam electron microscope for electron channeling contrast imaging of semiconductor materialIBM·Filed 2016·Granted Aug 22, 2017·10 cites·20 claims
- 3993US9018675B2Heterojunction III-V photovoltaic cell fabricationIBM·Filed 2014·Granted Apr 28, 2015·10 cites·7 claims
- 4092US11094842B2Heterojunction photovoltaic device and fabrication methodIBM·Filed 2019·Granted Aug 17, 2021·2 cites·17 claims
- 4192US9496165B1Method of forming a flexible semiconductor layer and devices on a flexible carrierIBM·Filed 2015·Granted Nov 15, 2016·6 cites·19 claims
- 4292US8940569B2Dual-gate bio/chem sensorIBM·Filed 2012·Granted Jan 27, 2015·12 cites·14 claims
- 4392US8859348B2Strained silicon and strained silicon germanium on insulatorBEDELL STEPHEN W·Filed 2012·Granted Oct 14, 2014·12 cites·16 claims
- 4492US8709914B2Method for controlled layer transferBEDELL STEPHEN W·Filed 2011·Granted Apr 29, 2014·13 cites·24 claims
- 4592US8610212B2Semiconductor active matrix on buried insulatorBEDELL STEPHEN W·Filed 2012·Granted Dec 17, 2013·10 cites·4 claims
- 4692US8361859B2Stressed transistor with improved metastabilityIBM·Filed 2010·Granted Jan 29, 2013·13 cites·15 claims
- 4792US7084050B2Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion annealIBM·Filed 2005·Granted Aug 1, 2006·14 cites·33 claims
- 4892US7067400B2Method for preventing sidewall consumption during oxidation of SGOI islandsIBM·Filed 2004·Granted Jun 27, 2006·62 cites·24 claims
- 4991US10541343B2Monolithic integration of heterojunction solar cellsIBM·Filed 2016·Granted Jan 21, 2020·3 cites·18 claims
- 5091US9472703B2Monolithic integration of heterojunction solar cellsIBM·Filed 2013·Granted Oct 18, 2016·5 cites·18 claims
Showing the top 50 of 419 patent records by PatentIndex Score.
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