Inventor · disambiguated record
Steven M. Bilodeau
Also filed as: BILODEAU STEVEN · BILODEAU STEVEN M · BILODEAU STEVEN MICHAEL
40 granted patents·14 pending applications·1,560 citations·filing 1997–2023
98Inventor score
Top patents by PatentIndex Score
54 records- 0198US9337054B2Precursors for silicon dioxide gap fillHUNKS WILLIAM·Filed 2008·Granted May 10, 2016·443 cites·20 claims
- 0298US5972430ADigital chemical vapor deposition (CVD) method for forming a multi-component oxide layerADVANCED TECH MATERIALS·Filed 1997·Granted Oct 26, 1999·417 cites·24 claims
- 0396US6346741B1Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using sameADVANCED TECH MATERIALS·Filed 1998·Granted Feb 12, 2002·224 cites·17 claims
- 0494US7285308B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2004·Granted Oct 23, 2007·45 cites·79 claims
- 0594US5882416ALiquid delivery system, heater apparatus for liquid delivery system, and vaporizerADVANCED TECH MATERIALS·Filed 1997·Granted Mar 16, 1999·130 cites·38 claims
- 0691US11365351B2Wet etching composition and methodENTEGRIS INC·Filed 2020·Granted Jun 21, 2022·2 cites·20 claims
- 0790US6316797B1Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 1999·Granted Nov 13, 2001·67 cites·37 claims
- 0889US9074169B2Lithographic tool in situ clean formulationsCHEN TIANNIU·Filed 2010·Granted Jul 7, 2015·10 cites·16 claims
- 0989US7344589B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2006·Granted Mar 18, 2008·9 cites·13 claims
- 1089US6514835B1Stress control of thin films by mechanical deformation of wafer substrateADVANCED TECH MATERIALS·Filed 2000·Granted Feb 4, 2003·41 cites·20 claims
- 1187US11053440B2Silicon nitride etching composition and methodENTEGRIS INC·Filed 2019·Granted Jul 6, 2021·3 cites·20 claims
- 1286US7705382B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2007·Granted Apr 27, 2010·6 cites·25 claims
- 1385US8034407B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2007·Granted Oct 11, 2011·4 cites·16 claims
- 1482US7862857B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2010·Granted Jan 4, 2011·3 cites·20 claims
- 1582US6156623AStress control of thin films by mechanical deformation of wafer substrateADVANCED TECH MATERIALS·Filed 1998·Granted Dec 5, 2000·54 cites·42 claims
- 1681US10651045B2Compositions and methods for etching silicon nitride-containing substratesENTEGRIS INC·Filed 2018·Granted May 12, 2020·3 cites·20 claims
- 1780US12300498B2Formulations to selectively etch silicon-germanium relative to siliconENTEGRIS INC·Filed 2023·Granted May 13, 2025·0 cites·5 claims
- 1880US11875997B2Formulations to selectively etch silicon-germanium relative to siliconENTEGRIS INC·Filed 2018·Granted Jan 16, 2024·2 cites·8 claims
- 1980US6984417B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2001·Granted Jan 10, 2006·15 cites·27 claims
- 2079US8539781B2Component for solar adsorption refrigeration system and method of making such componentCARRUTHERS J DONALD·Filed 2008·Granted Sep 24, 2013·4 cites·17 claims
- 2178US7022864B2Ethyleneoxide-silane and bridged silane precursors for forming low k filmsADVANCED TECH MATERIALS·Filed 2003·Granted Apr 4, 2006·12 cites·29 claims
- 2277US6692569B2A-site-and/or b-site-modified pbzrtio3 materials and (pb, sr, ca, ba, mg) (zr, ti,nb, ta)o3 films having utility in ferroelectric random access memories and high performance thin film microactuatorsADVANCED TECH MATERIALS·Filed 2001·Granted Feb 17, 2004·11 cites·15 claims
- 2374US11697767B2Silicon nitride etching composition and methodENTEGRIS INC·Filed 2021·Granted Jul 11, 2023·0 cites·9 claims
- 2474US6312816B1A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuatorsADVANCED TECH MATERIALS·Filed 1998·Granted Nov 6, 2001·23 cites·25 claims
- 2573US2023295502A1Silicon nitride etching composition and methodENTEGRIS INC·Filed 2023·Application pending·0 cites
- 2670US6511856B2Confinement of E-fields in high density ferroelectric memory device structuresADVANCED TECH MATERIALS·Filed 2001·Granted Jan 28, 2003·11 cites·12 claims
- 2768US11781066B2Wet etching composition and methodENTEGRIS INC·Filed 2022·Granted Oct 10, 2023·0 cites·14 claims
- 2867US10957547B2Formulations to selectively etch silicon germanium relative to germaniumENTEGRIS INC·Filed 2016·Granted Mar 23, 2021·1 cites·18 claims
- 2967US10475658B2Formulations to selectively etch silicon and germaniumENTEGRIS INC·Filed 2014·Granted Nov 12, 2019·1 cites·11 claims
- 3063US2008048148A1Ethyleneoxide-silane and bridged silane precursors for forming low k filmsADVANCED TECH MATERIALS·Filed 2007·Application pending·0 cites
- 3161US10043658B2Precursors for silicon dioxide gap fillENTEGRIS INC·Filed 2018·Granted Aug 7, 2018·0 cites·16 claims
- 3258US9132412B2Component for solar adsorption refrigeration system and method of making such componentENTEGRIS INC·Filed 2013·Granted Sep 15, 2015·0 cites·20 claims
- 3358US8241704B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumHENDRIX BRYAN C·Filed 2011·Granted Aug 14, 2012·0 cites·15 claims
- 3458US2023407176A1Method for etching polysiliconENTEGRIS INC·Filed 2023·Application pending·0 cites
- 3558US2013324390A1Scalable lead zirconium titanate (pzt) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2013·Application pending·0 cites
- 3656US11530356B2Compositions and methods for selectively etching silicon nitride filmsENTEGRIS INC·Filed 2021·Granted Dec 20, 2022·0 cites·15 claims
- 3754US12012540B2Compositions and methods for selectively etching silicon nitride filmsENTEGRIS INC·Filed 2022·Granted Jun 18, 2024·0 cites·14 claims
- 3854US2024150653A1Etchant compositions and related methodsENTEGRIS INC·Filed 2023·Application pending·0 cites
- 3953US2016322232A1Use of non-oxidizing strong acids for the removal of ion-implanted resistENTEGRIS INC·Filed 2014·Application pending·0 cites
- 4052US2016225615A1Precursors for silicon dioxide gap fillENTEGRIS INC·Filed 2016·Application pending·0 cites
- 4151US10347504B2Use of non-oxidizing strong acids for the removal of ion-implanted resistENTEGRIS INC·Filed 2018·Granted Jul 9, 2019·0 cites·10 claims
- 4251US7012292B1Oxidative top electrode deposition process, and microelectronic device structureADVANCED TECH MATERIALS·Filed 1998·Granted Mar 14, 2006·11 cites·12 claims
- 4349US2006134897A1Ethyleneoxide-silane and bridged silane precursors for forming low k filmsBOROVIK ALEXANDER S·Filed 2005·Application pending·0 cites
- 4446US10290505B2Passivation of germanium surfacesENTEGRIS INC·Filed 2016·Granted May 14, 2019·0 cites·17 claims
- 4546US8053375B1Super-dry reagent compositions for formation of ultra low k filmsADVANCED TECH MATERIALS·Filed 2007·Granted Nov 8, 2011·0 cites·25 claims
- 4644US2008251104A1Systems and Methods for Determination of Endpoint of Chamber Cleaning ProcessesADVANCED TECH MATERIALS·Filed 2006·Application pending·0 cites
- 4743US10340150B2Ni:NiGe:Ge selective etch formulations and method of using sameENTEGRIS INC·Filed 2014·Granted Jul 2, 2019·0 cites·12 claims
- 4843US2006108623A1Oxidative top electrode deposition process, and microelectronic device structureBUSKIRK PETER C V·Filed 2005·Application pending·0 cites
- 4942US6342711B1Confinement of E-fields in high density ferroelectric memory device structuresADVANCED TECH MATERIALS·Filed 1999·Granted Jan 29, 2002·8 cites·22 claims
- 5041US10991809B2Composition and process for selectively etching p-doped polysilicon relative to silicon nitrideENTEGRIS INC·Filed 2016·Granted Apr 27, 2021·0 cites·17 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →