Inventor · disambiguated record
Stephen Bruce Brodsky
Also filed as: BRODSKY STEPHEN B · BRODSKY STEPHEN BRUCE
13 granted patents·593 citations·filing 1986–2001
94Inventor score
Top patents by PatentIndex Score
13 records- 0192US5690795AScrewless shield assembly for vacuum processing chambersAPPLIED MATERIALS INC·Filed 1995·Granted Nov 25, 1997·139 cites·16 claims
- 0291US5923999AMethod of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet deviceIBM·Filed 1996·Granted Jul 13, 1999·83 cites·23 claims
- 0390US6323130B1Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridgingIBM·Filed 2000·Granted Nov 27, 2001·59 cites·16 claims
- 0489US6440808B1Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-polyIBM·Filed 2000·Granted Aug 27, 2002·48 cites·20 claims
- 0586US5807788AMethod for selective deposition of refractory metal and device formed therebyIBM·Filed 1996·Granted Sep 15, 1998·72 cites·19 claims
- 0684US6388327B1Capping layer for improved silicide formation in narrow semiconductor structuresIBM·Filed 2001·Granted May 14, 2002·31 cites·6 claims
- 0784US6114736AControlled dopant diffusion and metal contamination in thin polycide gate conductor of MOSFET deviceIBM·Filed 1999·Granted Sep 5, 2000·49 cites·32 claims
- 0872US4974056AStacked metal silicide gate structure with barrierIBM·Filed 1987·Granted Nov 27, 1990·27 cites·6 claims
- 0970US4803110ACoated mask for photolithographic construction of electric circuitsIBM·Filed 1986·Granted Feb 7, 1989·43 cites·11 claims
- 1057US5086016AMethod of making semiconductor device contact including transition metal-compound dopant sourceIBM·Filed 1990·Granted Feb 4, 1992·27 cites·5 claims
- 1151US6245668B1Sputtered tungsten diffusion barrier for improved interconnect robustnessIBM·Filed 1998·Granted Jun 12, 2001·14 cites·22 claims
- 1240US6838364B2Sputtered tungsten diffusion barrier for improved interconnect robustnessIBM·Filed 2001·Granted Jan 4, 2005·0 cites·17 claims
- 1331US6049131ADevice formed by selective deposition of refractory metal of less than 300 Angstroms of thicknessIBM·Filed 1997·Granted Apr 11, 2000·1 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →