Inventor · disambiguated record
Stefan Gamerith
Also filed as: GAMERITH STEFAN
19 granted patents·4 pending applications·50 citations·filing 2008–2018
92Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA9INFINEON TECHNOLOGIES AUSTRIA AG9WEBER HANS4INFINEON TECHNOLOGIES AG1
Top patents by PatentIndex Score
23 records- 0191US9024383B2Semiconductor device with a super junction structure with one, two or more pairs of compensation layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 5, 2015·11 cites·18 claims
- 0288US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 0385US9954056B2Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 24, 2018·4 cites·18 claims
- 0484US9209292B2Charge compensation semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 0584US8866222B2Charge compensation semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 21, 2014·5 cites·9 claims
- 0681US9570596B2Super junction semiconductor device having a compensation structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·3 cites·2 claims
- 0779US9570607B2Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·2 cites·5 claims
- 0876US9147763B2Charge-compensation semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 29, 2015·4 cites·20 claims
- 0975US8716788B2Semiconductor device with self-charging field electrodesWEBER HANS·Filed 2011·Granted May 6, 2014·4 cites·19 claims
- 1068US9773863B2VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 26, 2017·2 cites·18 claims
- 1165US9112053B2Method for producing a semiconductor device including a dielectric layerWEBER HANS·Filed 2012·Granted Aug 18, 2015·2 cites·16 claims
- 1265US8823084B2Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching lossesINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Sep 2, 2014·2 cites·25 claims
- 1363US8288230B2Method for producing a gate electrode structureWEBER HANS·Filed 2010·Granted Oct 16, 2012·2 cites·21 claims
- 1454US9537003B2Semiconductor device with charge compensationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Jan 3, 2017·0 cites·15 claims
- 1550US9117694B2Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Aug 25, 2015·0 cites·13 claims
- 1648US11302781B2Semiconductor device having an electrostatic discharge protection structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 12, 2022·0 cites·20 claims
- 1748US9627471B2Super junction semiconductor device having strip structures in a cell areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Apr 18, 2017·0 cites·8 claims
- 1847US2017373140A1Semiconductor Device with Field Dielectric in an Edge AreaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
- 1945US2010007028A1Device including an imide layer with non-contact openings and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Application pending·0 cites
- 2042US2014374882A1Semiconductor Device with Recombination Centers and Method of ManufacturingINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Application pending·0 cites
- 2141US2014327104A1Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric LayerINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Application pending·0 cites
- 2239US8399325B2Method for producing an electrode structureWEBER HANS·Filed 2011·Granted Mar 19, 2013·0 cites·26 claims
- 2332US10256325B2Radiation-hardened power semiconductor devices and methods of forming themINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2012·Granted Apr 9, 2019·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →