Inventor · disambiguated record
Stacia Keller
Also filed as: KELLER STACIA
34 granted patents·11 pending applications·977 citations·filing 1996–2022
98Inventor score
Top patents by PatentIndex Score
45 records- 0198US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 0297US9443938B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2014·Granted Sep 13, 2016·27 cites·10 claims
- 0397US6849882B2Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layerCREE INC·Filed 2002·Granted Feb 1, 2005·312 cites·34 claims
- 0496US10043896B2III-Nitride transistor including a III-N depleting layerTRANSPHORM INC·Filed 2017·Granted Aug 7, 2018·12 cites·20 claims
- 0596US9842922B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2016·Granted Dec 12, 2017·12 cites·20 claims
- 0696US6610144B2Method to reduce the dislocation density in group III-nitride filmsUNIV CALIFORNIA·Filed 2001·Granted Aug 26, 2003·113 cites·32 claims
- 0795US9865719B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2016·Granted Jan 9, 2018·13 cites·6 claims
- 0895US9685323B2Buffer layer structures suited for III-nitride devices with foreign substratesTRANSPHORM INC·Filed 2015·Granted Jun 20, 2017·13 cites·19 claims
- 0995US9245993B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Jan 26, 2016·16 cites·19 claims
- 1095US7566580B2Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Jul 28, 2009·63 cites·20 claims
- 1195US7091514B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2003·Granted Aug 15, 2006·70 cites·9 claims
- 1294US9245992B2Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Jan 26, 2016·15 cites·25 claims
- 1393US9165766B2Buffer layer structures suited for III-nitride devices with foreign substratesKELLER STACIA·Filed 2012·Granted Oct 20, 2015·20 cites·49 claims
- 1493US8455885B2Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor depositionKELLER STACIA·Filed 2012·Granted Jun 4, 2013·23 cites·20 claims
- 1593US7504274B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 17, 2009·16 cites·12 claims
- 1689US8188458B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesCRAVEN MICHAEL D·Filed 2011·Granted May 29, 2012·7 cites·21 claims
- 1789US6261931B1High quality, semi-insulating gallium nitride and method and system for forming sameUNIV CALIFORNIA·Filed 1998·Granted Jul 17, 2001·95 cites·23 claims
- 1885US10312361B2Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltageUNIV CALIFORNIA·Filed 2016·Granted Jun 4, 2019·6 cites·19 claims
- 1983US12159929B1High mobility group-III nitride transistors with strained channelsUNIV CALIFORNIA·Filed 2020·Granted Dec 3, 2024·1 cites·25 claims
- 2082US9076927B2(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layersUNIV CALIFORNIA·Filed 2013·Granted Jul 7, 2015·5 cites·23 claims
- 2181US8193020B2Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor depositionKELLER STACIA·Filed 2009·Granted Jun 5, 2012·6 cites·27 claims
- 2280US7977694B2High light extraction efficiency light emitting diode (LED) with emitters within structured materialsUNIV CALIFORNIA·Filed 2007·Granted Jul 12, 2011·7 cites·26 claims
- 2376US8882935B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor depositionCHAKRABORTY ARPAN·Filed 2013·Granted Nov 11, 2014·2 cites·23 claims
- 2475US8502246B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionCHAKRABORTY ARPAN·Filed 2009·Granted Aug 6, 2013·3 cites·22 claims
- 2572US11101379B2Structure for increasing mobility in a high electron mobility transistorUNIV CALIFORNIA·Filed 2017·Granted Aug 24, 2021·2 cites·23 claims
- 2667US7982208B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2006·Granted Jul 19, 2011·1 cites·26 claims
- 2755US5891790AMethod for the growth of P-type gallium nitride and its alloysUNIV CALIFORNIA·Filed 1997·Granted Apr 6, 1999·19 cites·9 claims
- 2854US12230678B2III-N based material structures, methods, devices and circuit modules based on strain managementUNIV CALIFORNIA·Filed 2019·Granted Feb 18, 2025·0 cites·20 claims
- 2954US2012205623A1NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICESCRAVEN MICHAEL D·Filed 2012·Application pending·0 cites
- 3054US2016133737A1Carbon doping semiconductor devicesTRANSPHORM INC·Filed 2015·Application pending·0 cites
- 3152US12211955B2Method to control the relaxation of thick films on lattice-mismatched substratesUNIV CALIFORNIA·Filed 2022·Granted Jan 28, 2025·0 cites·18 claims
- 3248US8878249B2Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistorsUNIV CALIFORNIA·Filed 2013·Granted Nov 4, 2014·0 cites·21 claims
- 3347US9281183B2Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface chargeUNIV CALIFORNIA·Filed 2015·Granted Mar 8, 2016·0 cites·17 claims
- 3446US2021399121A1Novel approach to controlling linearity in n-polar gan mishemtsUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 3546US2022102580A1Wafer bonding for embedding active regions with relaxed nanofeaturesUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 3645US5780355AUV assisted gallium nitride growthUNIV CALIFORNIA·Filed 1996·Granted Jul 14, 1998·11 cites·8 claims
- 3744US11594625B2III-N transistor structures with stepped cap layersUNIV CALIFORNIA·Filed 2020·Granted Feb 28, 2023·0 cites·25 claims
- 3844US2008111144A1LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYSUNIV CALIFORNIA·Filed 2007·Application pending·0 cites
- 3943US2006223211A1Semiconductor devices based on coalesced nano-rod arraysUNIV CALIFORNIA·Filed 2005·Application pending·0 cites
- 4042US2016163846A1Metalorganic chemical vapor deposition of oxide dielectrics on n-polar iii-nitride semiconductors with high interface quality and tunable fixed interface chargeUNIV CALIFORNIA·Filed 2016·Application pending·0 cites
- 4142US2024063340A1METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION OF PSEUDO-SUBSTRATES AND FORMATION OF COMPOSITES ALLOWING THE ADDITION OF PREVIOUSLY UN-ACCESSIBLE FUNCTIONALITY OF GROUP lll-NITRIDESUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 4240US2005142876A1Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitrideFiled 2004·Application pending·0 cites
- 4338US11588096B2Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layersUNIV CALIFORNIA·Filed 2017·Granted Feb 21, 2023·0 cites·21 claims
- 4437US2012126239A1Layer structures for controlling stress of heteroepitaxially grown iii-nitride layersKELLER STACIA·Filed 2010·Application pending·0 cites
- 4536US2011057198A1TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPINGUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →