Inventor · disambiguated record
Stefan Sedlmaier
Also filed as: SEDLMAIER STEFAN
18 granted patents·1 pending application·131 citations·filing 2006–2016
94Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA8INFINEON TECHNOLOGIES AG2INFINEON TECHNOLOGIES AUSTRIA AG2MAUDER ANTON2PFIRSCH FRANK DIETER2
Top patents by PatentIndex Score
19 records- 0193US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0292US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 0389US7709891B2Component arrangement including a power semiconductor component having a drift control zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 4, 2010·16 cites·22 claims
- 0485US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 0584US7821033B2Semiconductor component comprising a drift zone and a drift control zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 26, 2010·11 cites·13 claims
- 0684US7554137B2Power semiconductor component with charge compensation structure and method for the fabrication thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·8 cites·29 claims
- 0780US7947569B2Method for producing a semiconductor including a foreign material layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 24, 2011·8 cites·22 claims
- 0879US8643086B2Semiconductor component with high breakthrough tension and low forward resistancePFIRSCH FRANK DIETER·Filed 2012·Granted Feb 4, 2014·5 cites·45 claims
- 0979US8110868B2Power semiconductor component with a low on-state resistancePFIRSCH FRANK DIETER·Filed 2006·Granted Feb 7, 2012·8 cites·13 claims
- 1078US9190511B2Semiconductor component with a drift region and a drift control regionINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 17, 2015·4 cites·34 claims
- 1176US7943449B2Semiconductor component structure with vertical dielectric layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 1271US8263450B2Power semiconductor component with charge compensation structure and method for the fabrication thereofSEDLMAIER STEFAN·Filed 2009·Granted Sep 11, 2012·3 cites·35 claims
- 1366US9406763B2Stress-reduced field-effect semiconductor device and method for forming thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 2, 2016·1 cites·18 claims
- 1462US7968919B2Integrated circuit including a charge compensation componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jun 28, 2011·2 cites·2 claims
- 1562US7943987B2Semiconductor component with a drift zone and a drift control zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted May 17, 2011·2 cites·20 claims
- 1657US8193584B2Semiconductor component including a drift zone and a drift control zoneMAUDER ANTON·Filed 2008·Granted Jun 5, 2012·1 cites·5 claims
- 1755US9941365B2Method for forming a stress-reduced field-effect semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 10, 2018·0 cites·16 claims
- 1847US8319261B2Semiconductor component structure with vertical dielectric layersMAUDER ANTON·Filed 2011·Granted Nov 27, 2012·0 cites·8 claims
- 1944US2010273307A1Method of making a device including a capacitive structureINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →