Inventor · disambiguated record
Stephan Wirths
Also filed as: WIRTHS STEPHAN
8 granted patents·9 pending applications·2 citations·filing 2015–2025
73Inventor score
Top patents by PatentIndex Score
17 records- 0181US10566764B2Plasmonic quantum well laserIBM·Filed 2018·Granted Feb 18, 2020·2 cites·15 claims
- 0277US2025359140A1Power semiconductor device and method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2025·Application pending·0 cites
- 0365US10965101B2Plasmonic quantum well laserIBM·Filed 2019·Granted Mar 30, 2021·0 cites·8 claims
- 0460US2025275176A1Power semiconductor device and method for producing a power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 0553US2025372375A1Manufacturing method for a power semiconductor device and power semiconductor deviceHITACHI ENERGY LTD·Filed 2023·Application pending·0 cites
- 0651US12426343B2Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereofHITACHI ENERGY LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 0751US2023411514A1Power semiconductor deviceHITACHI ENERGY SWITZERLAND AG·Filed 2023·Application pending·0 cites
- 0850US12513978B2Manufacturing method for a power semiconductor device and power semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Granted Dec 30, 2025·0 cites·14 claims
- 0950US2025359142A1Method for producing a semiconductor device and semiconductor deviceHITACHI ENERGY LTD·Filed 2023·Application pending·0 cites
- 1049US12113131B2Strain enhanced SiC power semiconductor device and method of manufacturingHITACHI ENERGY LTD·Filed 2020·Granted Oct 8, 2024·0 cites·20 claims
- 1149US11967616B2Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the sameHITACHI ENERGY LTD·Filed 2019·Granted Apr 23, 2024·0 cites·20 claims
- 1248US2024222462A1Method for forming an ohmic contact on a wide-bandgap semiconductor device and wide-bandgap semiconductor deviceHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1347US12062698B2Silicon carbide transistor deviceHITACHI ENERGY LTD·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
- 1446US2024055495A1Power semiconductor device and method for manufacturing a power semiconductor deviceHITACHI ENERGY SWITZERLAND AG·Filed 2021·Application pending·0 cites
- 1545US2024079454A1Silicon carbide power device and method for manufacturing the sameHITACHI ENERGY SWITZERLAND AG·Filed 2021·Application pending·0 cites
- 1640US2021210348A1Method For Depositing A Crystal Layer At Low Temperatures, In Particular A Photoluminescent IV-IV Layer On An IV Substrate, And An Optoelectronic Component Having Such A LayerFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2021·Application pending·0 cites
- 1726US10988858B2Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layerFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2015·Granted Apr 27, 2021·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →