Inventor · disambiguated record
Stefan Woehlert
Also filed as: WOEHLERT STEFAN
21 granted patents·6 pending applications·24 citations·filing 2006–2025
91Inventor score
Files withINFINEON TECHNOLOGIES AG18DETZEL THOMAS1GANITZER PAUL1INFINEON TECHNOLOGIES AUSTRIA1INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
27 records- 0188US8502274B1Integrated circuit including power transistor cells and a connecting lineMATOY KURT·Filed 2012·Granted Aug 6, 2013·18 cites·25 claims
- 0282US12327727B2Chip with a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 0382US2025266259A1Chip with a silicon carbide substrate and an electrical contactINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0473US9589880B2Method for processing a wafer and wafer structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 7, 2017·3 cites·26 claims
- 0572US11798807B2Process for producing an electrical contact on a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 24, 2023·0 cites·14 claims
- 0667US10741402B2Electronic device, electronic module and methods for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 11, 2020·1 cites·13 claims
- 0763US11615963B2Electronic device, electronic module and methods for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 0862US11842938B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 12, 2023·0 cites·18 claims
- 0962US11043383B2Electrical contact connection on silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 22, 2021·0 cites·12 claims
- 1057US8324115B2Semiconductor chip, semiconductor device and methods for producing the sameOTREMBA RALF·Filed 2006·Granted Dec 4, 2012·1 cites·27 claims
- 1156US9634108B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 25, 2017·0 cites·12 claims
- 1256US9391154B2Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etchingINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 12, 2016·0 cites·14 claims
- 1354US8097918B2Semiconductor arrangement including a load transistor and sense transistorKADOW CHRISTOPH·Filed 2009·Granted Jan 17, 2012·1 cites·14 claims
- 1452US10446469B2Semiconductor device having a copper element and method of forming a semiconductor device having a copper elementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 15, 2019·0 cites·15 claims
- 1552US9209281B2Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etchingRUPP ROLAND·Filed 2007·Granted Dec 8, 2015·0 cites·25 claims
- 1651US11410950B2Semiconductor substrate having a bond pad material based on aluminumINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 9, 2022·0 cites·18 claims
- 1751US11217500B2Semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
- 1850US2025201671A1Metal-filled contact hole in micro-fabricated deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1949US9935060B2Method for processing a wafer and wafer structureINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 3, 2018·0 cites·10 claims
- 2047US8156643B2Semiconductor deviceSCHNEEGANS MANFRED·Filed 2011·Granted Apr 17, 2012·0 cites·20 claims
- 2146US2025253280A1Sinterable electrical contact on a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2242US9418937B2Integrated circuit and method of forming an integrated circuitDETZEL THOMAS·Filed 2011·Granted Aug 16, 2016·0 cites·17 claims
- 2341US7834427B2Integrated circuit having a semiconductor arrangementINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Nov 16, 2010·0 cites·12 claims
- 2441US2023102515A1Device for controlling trapped ions with reinforced ion trap metal layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 2540US9812376B2Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 7, 2017·0 cites·14 claims
- 2638US2006273810A1Silicon wafer with solderable coating on its wafer rear side, and process for producing itGANITZER PAUL·Filed 2006·Application pending·0 cites
- 2730US2017053879A1Method, a semiconductor device and a layer arrangementINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →