Inventor · disambiguated record
Sun-Jay Chang
Also filed as: CHANG SUN-JAY
33 granted patents·2 pending applications·1,551 citations·filing 1999–2022
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15TAIWAN SEMICONDUCTOR MFG14HU CHIA-HSIN2CHANG SUN-JAY1HORNG JAW-JUINN1
Top patents by PatentIndex Score
35 records- 0198US8860148B2Structure and method for FinFET integrated with capacitorHU CHIA-HSIN·Filed 2012·Granted Oct 14, 2014·1.3k cites·13 claims
- 0297US8610241B1Homo-junction diode structures using fin field effect transistor processingHU CHIA-HSIN·Filed 2012·Granted Dec 17, 2013·43 cites·20 claims
- 0396US9076869B1FinFET device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 7, 2015·20 cites·20 claims
- 0493US8946038B2Diode structures using fin field effect transistor processing and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 3, 2015·14 cites·20 claims
- 0588US9318621B2Rotated STI diode on FinFET technologyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·7 cites·20 claims
- 0686US9305918B2Method for FinFET integrated with capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 5, 2016·6 cites·19 claims
- 0785US9093566B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·5 cites·20 claims
- 0883US7220630B2Method for selectively forming strained etch stop layers to improve FET charge carrier mobilityTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·40 cites·36 claims
- 0982US12471326B2Guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·4 claims
- 1082US7279430B2Process for fabricating a strained channel MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 9, 2007·23 cites·27 claims
- 1181US9166067B2Device layout for reference and sensor circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 20, 2015·5 cites·9 claims
- 1281US7898028B2Process for fabricating a strained channel MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·6 cites·15 claims
- 1380US9679992B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·2 cites·20 claims
- 1480US7897501B2Method of fabricating a field-effect transistor having robust sidewall spacersTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 1, 2011·9 cites·21 claims
- 1579US9570587B2Dislocation stress memorization technique for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·2 cites·8 claims
- 1679US9450044B2Guard ring structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·20 claims
- 1779US8736355B2Device layout for reference and sensor circuitsHORNG JAW-JUINN·Filed 2012·Granted May 27, 2014·5 cites·18 claims
- 1879US6885214B1Method for measuring capacitance-voltage curves for transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 26, 2005·24 cites·32 claims
- 1975US11450735B2Method of forming guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 2075US7078723B2Microelectronic device with depth adjustable sillTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·17 cites·22 claims
- 2170US11532730B2Method of forming a FinFET device by implantation through capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2270US9419087B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·2 cites·20 claims
- 2369US10269986B2Rotated STI diode on FinFET technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·1 cites·21 claims
- 2469US9780003B2Bipolar junction transistor formed on fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·1 cites·20 claims
- 2568US9293378B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·1 cites·20 claims
- 2667US9865592B2Method for FinFET integrated with capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·1 cites·20 claims
- 2766US10868112B2Circuit device including guard ring and method of forming guard ringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2860US10128329B2Method of forming guard ring structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·0 cites·19 claims
- 2958US10727319B2Dislocation SMT for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·0 cites·15 claims
- 3056US7190033B2CMOS device and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 13, 2007·7 cites·23 claims
- 3155US9755075B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 3255US9281399B2FinFET with high breakdown voltage characteristicsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 8, 2016·0 cites·20 claims
- 3352US2013200455A1Dislocation smt for finfet deviceLO WEN-CHENG·Filed 2012·Application pending·0 cites
- 3436US2005208726A1Spacer approach for CMOS devicesCHANG SUN-JAY·Filed 2004·Application pending·0 cites
- 3534US6365471B1Method for producing PMOS devicesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 2, 2002·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →