Inventor · disambiguated record
Sung-Lae Cho
Also filed as: CHO SUNG-LAE
41 granted patents·21 pending applications·559 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
62 records- 0196US8507353B2Method of forming semiconductor device having self-aligned plugOH GYU-HWAN·Filed 2011·Granted Aug 13, 2013·38 cites·11 claims
- 0296US7943502B2Method of forming a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·26 cites·12 claims
- 0396US7291556B2Method for forming small features in microelectronic devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 6, 2007·118 cites·28 claims
- 0495US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0594US7727884B2Methods of forming a semiconductor device including a phase change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·19 cites·20 claims
- 0694US7569417B2Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 4, 2009·38 cites·27 claims
- 0792US7642622B2Phase changeable memory cells and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 5, 2010·24 cites·13 claims
- 0890US7473597B2Method of forming via structures and method of fabricating phase change memory devices incorporating such via structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 6, 2009·21 cites·18 claims
- 0988US8625325B2Memory cells including resistance variable material patterns of different compositionsAN HYEONG-GEUN·Filed 2010·Granted Jan 7, 2014·13 cites·20 claims
- 1088US8034683B2Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 11, 2011·8 cites·20 claims
- 1188US7759667B2Phase change memory device including resistant materialSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·17 cites·9 claims
- 1287US8263963B2Phase change memory devicePARK YOUNG-LIM·Filed 2011·Granted Sep 11, 2012·3 cites·7 claims
- 1387US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 1485US7867880B2Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·6 cites·14 claims
- 1584US8790976B2Method of forming semiconductor device having self-aligned plugSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·5 cites·9 claims
- 1684US8502184B2Nonvolatile memory device using variable resistive elementAN HYEONG-GEUN·Filed 2011·Granted Aug 6, 2013·10 cites·10 claims
- 1782US9543513B2Variable resistance material layers and variable resistance memory devices including the sameKIM DO-HYUNG·Filed 2015·Granted Jan 10, 2017·3 cites·19 claims
- 1882US8580606B2Method of forming resistance variable memory devicePARK JEONG-HEE·Filed 2011·Granted Nov 12, 2013·6 cites·20 claims
- 1980US7807497B2Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·5 cites·32 claims
- 2079US12439612B2Semiconductor device and manufacturing method of the semiconductor deviceSK HYNIX INC·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 2179US6707724B2Apparatus for providing reference voltages to memory modules in a memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 16, 2004·27 cites·13 claims
- 2278US9318700B2Method of manufacturing a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·3 cites·20 claims
- 2378US7803654B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·6 cites·25 claims
- 2477US8703237B2Methods of forming a material layer and methods of fabricating a memory devicePARK HYE-YOUNG·Filed 2009·Granted Apr 22, 2014·3 cites·14 claims
- 2577US7487606B2Functional shoeG MAN CO LTD·Filed 2006·Granted Feb 10, 2009·40 cites·20 claims
- 2676US7523543B2Methods of forming magnetic memory devices including ferromagnetic spacersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·7 cites·14 claims
- 2776US7485559B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·7 cites·15 claims
- 2876US7411208B2Phase-change memory device having a barrier layer and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·20 cites·44 claims
- 2975US7265050B2Methods for fabricating memory devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·21 cites·17 claims
- 3073US8644062B2Multi-level memory device using resistance materialKIM IK-SOO·Filed 2010·Granted Feb 4, 2014·4 cites·17 claims
- 3173US7838326B2Methods of fabricating semiconductor device including phase change layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 23, 2010·5 cites·20 claims
- 3270US8142846B2Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory deviceBAE BYOUNG-JAE·Filed 2008·Granted Mar 27, 2012·4 cites·19 claims
- 3367US11974442B2Semiconductor device and manufacturing method of the semiconductor deviceSK HYNIX INC·Filed 2021·Granted Apr 30, 2024·0 cites·10 claims
- 3465US2012319069A1Phase Change Memory DevicePARK YOUNG-LIM·Filed 2012·Application pending·0 cites
- 3559US8834968B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Sep 16, 2014·0 cites·15 claims
- 3659US2017084834A1Variable resistance material layers and variable resistance memory devices including the sameKIM DO-HYUNG·Filed 2016·Application pending·0 cites
- 3758US8187914B2Methods of forming a phase change memory deviceLEE JIN-IL·Filed 2010·Granted May 29, 2012·1 cites·15 claims
- 3856US2009075420A1Method of forming chalcogenide layer including te and method of fabricating phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3955US11707005B2Chalcogenide material, variable resistance memory device and electronic deviceSK HYNIX INC·Filed 2020·Granted Jul 18, 2023·0 cites·14 claims
- 4055US8852686B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceBAE BYOUNG-JAE·Filed 2012·Granted Oct 7, 2014·0 cites·19 claims
- 4155US2008096386A1Method of forming a phase-changeable layer and method of manufacturing a semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4253US2024371440A1Configuration bit circuit for programmable logic device including phase change memory and operation method thereofREVOL VER INC·Filed 2024·Application pending·0 cites
- 4353US2024371441A1Configuration bit circuit for programmable logic device with phase change random access memory and program and operation method thereofREVOL VER INC·Filed 2024·Application pending·0 cites
- 4452US2008249587A1Microcurrent stimulus apparatusG MAN CO LTD·Filed 2008·Application pending·0 cites
- 4551US7612359B2Microelectronic devices using sacrificial layers and structures fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 3, 2009·0 cites·12 claims
- 4649US2006027451A1Methods for sputtering a target material by intermittently applying a voltage thereto and related apparatus, and methods of fabricating a phase-changeable memory device employing the samePARK JEONG-HEE·Filed 2005·Application pending·0 cites
- 4749US2009280599A1Phase change memory device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4848US8993441B2Methods of forming a thin layer and methods of manufacturing a phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 31, 2015·0 cites·20 claims
- 4947US2008272355A1Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 5046US2012231603A1Methods of forming phase change material layers and methods of manufacturing phase change memory devicesIM DONG-HYUN·Filed 2012·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Sung-Lae Cho files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →