Inventor · disambiguated record
Sung-Yong Chung
Also filed as: CHUNG SUNG YONG
27 granted patents·1 pending application·111 citations·filing 2006–2022
95Inventor score
Files withSK HYNIX INC9SPANSION LLC8CHUNG SUNG-YONG2CYPRESS SEMICONDUCTOR CORP2Longitude Flash Memory Solutions Ltd2
Top patents by PatentIndex Score
28 records- 0194US9679660B1Semiconductor memory device and operating method thereofSK HYNIX INC·Filed 2016·Granted Jun 13, 2017·21 cites·19 claims
- 0292US9589647B1Semiconductor device with improved programming reliabilitySK HYNIX INC·Filed 2016·Granted Mar 7, 2017·10 cites·20 claims
- 0390US9570458B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 14, 2017·5 cites·14 claims
- 0488US11545190B2Semiconductor memory deviceSK HYNIX INC·Filed 2019·Granted Jan 3, 2023·6 cites·19 claims
- 0584US8692310B2Gate fringing effect based channel formation for semiconductor deviceSUH YOUSEOK·Filed 2009·Granted Apr 8, 2014·10 cites·14 claims
- 0683US7679967B2Controlling AC disturbance while programmingSPANSION LLC·Filed 2007·Granted Mar 16, 2010·10 cites·23 claims
- 0778US8885418B1Adaptive double pulse BCF programmingSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 11, 2014·6 cites·20 claims
- 0876US11950412B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 0975US12224031B2Semiconductor memory deviceSK HYNIX INC·Filed 2022·Granted Feb 11, 2025·0 cites·15 claims
- 1075US12148501B2Semiconductor memory deviceSK HYNIX INC·Filed 2022·Granted Nov 19, 2024·0 cites·10 claims
- 1175US7361943B2Silicon-based backward diodes for zero-biased square law detection and detector arrays of sameUNIV OHIO STATE·Filed 2006·Granted Apr 22, 2008·7 cites·29 claims
- 1274US9734913B2Data storage device and method of driving the sameSK HYNIX INC·Filed 2016·Granted Aug 15, 2017·5 cites·23 claims
- 1373US7916601B2Optical recording/reproducing write strategy method, medium, and apparatusTOSHIBA SAMSUNG STORAGE TECH·Filed 2008·Granted Mar 29, 2011·2 cites·27 claims
- 1473US7659569B2Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut regionSPANSION LLC·Filed 2007·Granted Feb 9, 2010·5 cites·21 claims
- 1568US7746698B2Programming in memory devices using source bitline voltage biasSPANSION LLC·Filed 2007·Granted Jun 29, 2010·7 cites·20 claims
- 1665US7952938B2Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memorySPANSION LLC·Filed 2010·Granted May 31, 2011·3 cites·20 claims
- 1763US11251189B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Feb 15, 2022·0 cites·24 claims
- 1863US8264898B2Controlling AC disturbance while programmingCHUNG SUNG-YONG·Filed 2011·Granted Sep 11, 2012·2 cites·20 claims
- 1960US10490284B2Memory device and operating method thereofSK HYNIX INC·Filed 2018·Granted Nov 26, 2019·1 cites·18 claims
- 2059US7746705B2Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memorySPANSION LLC·Filed 2007·Granted Jun 29, 2010·4 cites·13 claims
- 2158US10297606B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted May 21, 2019·0 cites·12 claims
- 2257US7986562B2Controlling AC disturbance while programmingSPANSION LLC·Filed 2009·Granted Jul 26, 2011·2 cites·12 claims
- 2356US7626869B2Multi-phase wordline erasing for flash memorySPANSION LLC·Filed 2007·Granted Dec 1, 2009·3 cites·20 claims
- 2451US7995386B2Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturbSPANSION LLC·Filed 2008·Granted Aug 9, 2011·2 cites·20 claims
- 2550US10672480B2Memory device and operating method thereofSK HYNIX INC·Filed 2019·Granted Jun 2, 2020·0 cites·19 claims
- 2643US8559255B2Controlling AC disturbance while programmingCHUNG SUNG-YONG·Filed 2012·Granted Oct 15, 2013·0 cites·20 claims
- 2737US9196624B2Leakage reducing writeline charge protection circuitDAVIS BRADLEY MARC·Filed 2012·Granted Nov 24, 2015·0 cites·20 claims
- 2832US2018032271A1Semiconductor memory device and operating method thereofSK HYNIX INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →