Assignee
Longitude Flash Memory Solutions Ltd
IE·37 granted patents·16 pending applications·31 citations·filing 2015–2024
Top patents by PatentIndex Score
53 records- 0195US10593812B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Mar 17, 2020·7 cites·20 claims
- 0294US11257912B2Sonos stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Feb 22, 2022·2 cites·13 claims
- 0392US10700083B1Method of ONO integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2015·Granted Jun 30, 2020·6 cites·11 claims
- 0491US2024332385A1Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2024·Application pending·0 cites
- 0588US10790364B2SONOS stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Sep 29, 2020·2 cites·9 claims
- 0688US10374067B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Aug 6, 2019·3 cites·19 claims
- 0785US12009401B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 0885US2024234550A1Oxide-Nitride-Oxide Stack Having Multiple Oxynitride LayersLongitude Flash Memory Solutions Ltd·Filed 2023·Application pending·0 cites
- 0982US12266521B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 1, 2025·0 cites·16 claims
- 1082US12048162B2Method of ono integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2023·Granted Jul 23, 2024·0 cites·6 claims
- 1181US2023074163A1Sonos ono stack scalingLongitude Flash Memory Solutions Ltd·Filed 2022·Application pending·0 cites
- 1280US11721733B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Aug 8, 2023·0 cites·10 claims
- 1380US2022173216A1Sonos stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2022·Application pending·0 cites
- 1479US11456365B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Sep 27, 2022·0 cites·45 claims
- 1579US10699901B2SONOS ONO stack scalingLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jun 30, 2020·1 cites·21 claims
- 1678US11784243B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 1777US12014800B2Low standby power with fast turn on method for non-volatile memory devicesLongitude Flash Memory Solutions Ltd·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 1877US10706937B2Asymmetric pass field-effect transistor for non-volatile memoryLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jul 7, 2020·1 cites·15 claims
- 1976US11950412B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 2076US11641745B2Embedded sonos with a high-K metal gate and manufacturing methods of the sameLongitude Flash Memory Solutions Ltd·Filed 2019·Granted May 2, 2023·1 cites·22 claims
- 2176US10615289B2Nonvolatile charge trap memory device having a high dielectric constant blocking regionLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Apr 7, 2020·1 cites·18 claims
- 2275US10332599B2Bias scheme for word programming in non-volatile memory and inhibit disturb reductionLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jun 25, 2019·3 cites·20 claims
- 2374US10903068B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Jan 26, 2021·1 cites·18 claims
- 2473US11222965B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jan 11, 2022·1 cites·14 claims
- 2573US11056565B2Flash memory device and methodLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 2673US2021249254A1Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Application pending·0 cites
- 2772US11569254B2Method of ono integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Jan 31, 2023·0 cites·18 claims
- 2872US2021104402A1Sonos ono stack scalingLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 2971US10903342B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jan 26, 2021·1 cites·20 claims
- 3071US2020287056A1Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 3170US11581029B2Low standby power with fast turn on method for non-volatile memory devicesLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Feb 14, 2023·0 cites·16 claims
- 3270US10896973B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jan 19, 2021·1 cites·20 claims
- 3370US2020161478A1Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 3470US2020161324A1Oxide formation in a plasma processLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 3568US12464780B2Nonvolatile charge trap memory device having a high dielectric constant blocking regionLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Nov 4, 2025·0 cites·15 claims
- 3667US10854625B2Method of integrating a charge-trapping gate stack into a CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Dec 1, 2020·0 cites·9 claims
- 3766US10903325B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jan 26, 2021·0 cites·8 claims
- 3866US10446656B2Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Oct 15, 2019·0 cites·17 claims
- 3966US2020111805A1Method of ONO Stack FormationLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 4065US10418373B2Method of ONO stack formationLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 17, 2019·0 cites·19 claims
- 4165US2021074821A1Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2020·Application pending·0 cites
- 4264US10424592B2Method of integrating a charge-trapping gate stack into a CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 24, 2019·0 cites·20 claims
- 4363US11251189B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Feb 15, 2022·0 cites·24 claims
- 4463US10784277B2Integration of a memory transistor into High-k, metal gate CMOS process flowLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 22, 2020·0 cites·18 claims
- 4561US10784356B2Embedded sonos with triple gate oxide and manufacturing method of the sameLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 22, 2020·0 cites·16 claims
- 4658US2019355583A1Method of forming drain extended mos transistors for high voltage circuitsLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 4757US10998019B2Low standby power with fast turn on method for non-volatile memory devicesLongitude Flash Memory Solutions Ltd·Filed 2019·Granted May 4, 2021·0 cites·14 claims
- 4853US10510387B2Low standby power with fast turn on method for non-volatile memory devicesLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Dec 17, 2019·0 cites·8 claims
- 4953US2019318785A1Systems, methods, and apparatus for memory cells with common source linesLongitude Flash Memory Solutions Ltd·Filed 2019·Application pending·0 cites
- 5052US10418110B2Asymmetric pass field-effect transistor for nonvolatile memoryLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Sep 17, 2019·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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