Inventor · disambiguated record
Suk-Jin Chung
Also filed as: CHUNG SUK H · CHUNG SUK-JIN
18 granted patents·9 pending applications·82 citations·filing 2002–2017
92Inventor score
Top patents by PatentIndex Score
27 records- 0194US7271055B2Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·26 cites·31 claims
- 0284US7354821B2Methods of fabricating trench capacitors with insulating layer collars in undercut regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·10 cites·29 claims
- 0383US9076647B2Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layerCHUNG SUK-JIN·Filed 2012·Granted Jul 7, 2015·8 cites·21 claims
- 0474US7361548B2Methods of forming a capacitor using an atomic layer deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·4 cites·22 claims
- 0571US9685498B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·1 cites·9 claims
- 0670US7700454B2Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impuritiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 20, 2010·4 cites·35 claims
- 0768US7531861B2Trench capacitors with insulating layer collars in undercut regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 12, 2009·3 cites·2 claims
- 0865US7172946B2Methods for forming semiconductor devices including thermal processingSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 6, 2007·10 cites·27 claims
- 0965US7049232B2Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 23, 2006·8 cites·26 claims
- 1061US7842581B2Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·1 cites·11 claims
- 1156US2014338600A1Exhausting apparatuses and film deposition facilities including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1255US8318560B2Methods of forming integrated circuit devices including a capacitorKIM WAN-DON·Filed 2007·Granted Nov 27, 2012·0 cites·11 claims
- 1354US7091102B2Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 15, 2006·4 cites·63 claims
- 1449US9412583B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameKANG SANG-YEOL·Filed 2012·Granted Aug 9, 2016·0 cites·15 claims
- 1549US7034350B2Capacitors including a cavity containing a buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·3 cites·10 claims
- 1649US2006148193A1Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1748US7335550B2Methods for forming semiconductor devices including thermal processingSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 26, 2008·0 cites·49 claims
- 1847US2006174511A1Clothes drying machineSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1942US2006172484A1Method of forming a thin layer and method of manufacturing a flash memory device and a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2041US10526706B2Gas supply unit and thin film deposition apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 7, 2020·0 cites·20 claims
- 2140US2006138511A1Methods of manufacturing a capacitor including a cavity containing a buried layerCHUNG SUK-JIN·Filed 2006·Application pending·0 cites
- 2238US7416904B2Method for forming dielectric layer of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 26, 2008·0 cites·37 claims
- 2337US2011136317A1Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2435US2004224475A1Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devicesFiled 2004·Application pending·0 cites
- 2534US8264026B2Nonvolatile memory devices and methods of manufacturing the sameLEE SUNG-HAE·Filed 2010·Granted Sep 11, 2012·0 cites·17 claims
- 2633US2011095397A1Semiconductor Structures Including Dielectric Layers and Capacitors Including Semiconductor StructuresCHUNG SUK-JIN·Filed 2010·Application pending·0 cites
- 2730US2011151639A1Semiconductor device, method of fabricating the same, semiconductor module, electronic circuit board, and electronic system including the deviceLIM JAE-SOON·Filed 2010·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Suk-Jin Chung files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →