Inventor · disambiguated record
Susumu Higuchi
Also filed as: HIGUCHI SUSUMU
14 granted patents·1 pending application·80 citations·filing 1986–2018
89Inventor score
Top patents by PatentIndex Score
15 records- 0186US4648136AHuman body protectorITOH C & CO LTD·Filed 1986·Granted Mar 10, 1987·53 cites·8 claims
- 0260US11898078B2Semiconductor phosphorSHINETSU HANDOTAI KK·Filed 2018·Granted Feb 13, 2024·0 cites·6 claims
- 0353US2010240552A1Method for evaluation of drug sensitivity by analysis of pomc geneTOKYO METROPOLITAN ORG MED RES·Filed 2008·Application pending·0 cites
- 0444US6479312B1Gallium phosphide luminescent deviceSHINETSU HANDOTAI KK·Filed 2000·Granted Nov 12, 2002·7 cites·23 claims
- 0534US5985023AMethod for growth of a nitrogen-doped gallium phosphide epitaxial layerSHINETSU HANDOTAI KK·Filed 1996·Granted Nov 16, 1999·4 cites·3 claims
- 0634US5759267ALiquid phase epitaxialSHINETSU HANDOTAI KK·Filed 1996·Granted Jun 2, 1998·2 cites·20 claims
- 0734US5603761ALiquid phase epitaxial growth method for carrying out the sameSHINETSU HANDOTAI KK·Filed 1995·Granted Feb 18, 1997·2 cites·8 claims
- 0832US5406093AGap pure green light emitting element substrateSHINETSU HANDOTAI KK·Filed 1994·Granted Apr 11, 1995·3 cites·3 claims
- 0932US5349208AGaP light emitting element substrate with oxygen doped bufferSHINETSU HANDOTAI KK·Filed 1993·Granted Sep 20, 1994·5 cites·1 claims
- 1031US6433365B1Epitaxial wafer and light emitting diodeSHINETSU HANDOTAI KK·Filed 1999·Granted Aug 13, 2002·2 cites·16 claims
- 1130US5731209AMethod for the determination of nitrogen concentration in compound semiconductorSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 24, 1998·1 cites·6 claims
- 1229US5514881AGap light emitting device having a low carbon content in the substrateSHINETSU HANDOTAI KK·Filed 1995·Granted May 7, 1996·1 cites·4 claims
- 1328US5851850AMethod for fabricating a gap type semiconductor substrate of red light emitting devicesSHINETSU HANDOTAI KK·Filed 1995·Granted Dec 22, 1998·0 cites·5 claims
- 1428US5234534ALiquid-phase growth process of compound semiconductorSHINETSU HANDOTAI KK·Filed 1992·Granted Aug 10, 1993·0 cites·4 claims
- 1525US5643827AGaP light emitting substrate and a method of manufacturing itSHINETSU HANDOTAI KK·Filed 1994·Granted Jul 1, 1997·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →