Inventor · disambiguated record
Sumio Ikegawa
Also filed as: IKEGAWA SUMIO
52 granted patents·14 pending applications·427 citations·filing 1987–2025
98Inventor score
Top patents by PatentIndex Score
66 records- 0197US8009465B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Aug 30, 2011·55 cites·17 claims
- 0296US8279663B2Magnetoresistance effect element and magnetic random access memoryNAKAYAMA MASAHIKO·Filed 2011·Granted Oct 2, 2012·33 cites·12 claims
- 0395US8014193B2Magnetoresistance effect element and magnetic random access memoryTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·41 cites·12 claims
- 0494US7355884B2Magnetoresistive elementTOSHIBA KK·Filed 2005·Granted Apr 8, 2008·28 cites·18 claims
- 0593US10622552B2Magnetoresistive stacks and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Apr 14, 2020·4 cites·18 claims
- 0691US11127896B2Shared spin-orbit-torque write line in a spin-orbit-torque MRAMEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Sep 21, 2021·4 cites·5 claims
- 0790US11637235B2In-plane spin orbit torque magnetoresistive stack/structure and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Apr 25, 2023·2 cites·26 claims
- 0888US7518907B2Magnetoresistive elementTOSHIBA KK·Filed 2008·Granted Apr 14, 2009·15 cites·15 claims
- 0987US8347175B2Magnetic memoryTOSHIBA KK·Filed 2010·Granted Jan 1, 2013·11 cites·20 claims
- 1087US8223533B2Magnetoresistive effect device and magnetic memoryOZEKI JYUNICHI·Filed 2009·Granted Jul 17, 2012·24 cites·11 claims
- 1185US7038939B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2003·Granted May 2, 2006·32 cites·12 claims
- 1284US11264564B2Magnetoresistive devices and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 1384US8472242B2Magnetoresistive effect memorySHIMOMURA NAOHARU·Filed 2010·Granted Jun 25, 2013·10 cites·19 claims
- 1484US7894246B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2008·Granted Feb 22, 2011·7 cites·22 claims
- 1584US7245524B2Magnetic memory device and write method of magnetic memory deviceTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·16 cites·23 claims
- 1681US8878321B2Magnetoresistive element and producing method thereofAIKAWA HISANORI·Filed 2012·Granted Nov 4, 2014·4 cites·15 claims
- 1780US11189781B2Magnetoresistive stack/structure including metal insertion substanceEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Nov 30, 2021·1 cites·13 claims
- 1880US9678179B2Tester for testing magnetic memoryKISHI TATSUYA·Filed 2014·Granted Jun 13, 2017·5 cites·21 claims
- 1980US7193890B2Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing methodTOSHIBA KK·Filed 2005·Granted Mar 20, 2007·12 cites·17 claims
- 2080US4855992AReversible optical recording medium with an optothermally deformable recording layerTOSHIBA KK·Filed 1987·Granted Aug 8, 1989·24 cites·18 claims
- 2180US2024315145A1Magnetoresistive stack/structure and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 2279US8143684B2Magnetoresistive elementNAGAMINE MAKOTO·Filed 2011·Granted Mar 27, 2012·5 cites·5 claims
- 2377US11488647B2Stacked magnetoresistive structures and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 1, 2022·4 cites·16 claims
- 2476US12167702B2Magnetoresistive stack/structure and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2575US12437828B2Systems and methods for monitoring and managing memory devicesEVERSPIN TECHNOLOGIES INC·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 2675US12029137B2Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted Jul 2, 2024·0 cites·18 claims
- 2774US7898846B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Mar 1, 2011·6 cites·5 claims
- 2874US2025063953A1Magnetoresistive stack and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 2972US7875903B2Magnetic memory deviceTOSHIBA KK·Filed 2008·Granted Jan 25, 2011·3 cites·19 claims
- 3072US7414880B2Magnetoresistive effect element and magnetic memoryTOSHIBA KK·Filed 2006·Granted Aug 19, 2008·3 cites·12 claims
- 3171US9203015B2Magnetic storage deviceAIKAWA HISANORI·Filed 2013·Granted Dec 1, 2015·2 cites·8 claims
- 3271US8173447B2Magnetoresistive element and magnetic memoryUEDA TOMOMASA·Filed 2010·Granted May 8, 2012·3 cites·5 claims
- 3371US7518906B2Magneto-resistive elementTOSHIBA KK·Filed 2006·Granted Apr 14, 2009·6 cites·18 claims
- 3470US10255961B2Data storage in synthetic antiferromagnets included in magnetic tunnel junctionsEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Apr 9, 2019·2 cites·20 claims
- 3570US7411263B2Magnetic memory deviceTOSHIBA KK·Filed 2006·Granted Aug 12, 2008·6 cites·19 claims
- 3670US7203088B2Magnetoresistive random access memory and driving method thereofTOSHIBA KK·Filed 2005·Granted Apr 10, 2007·7 cites·18 claims
- 3769US4839861AInformation recording medium rewritable by utilizing two metastable phases of a recording layer and method using the sameTOSHIBA KK·Filed 1987·Granted Jun 13, 1989·16 cites·27 claims
- 3867US11798646B2Systems and methods for monitoring and managing memory devicesEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 3966US8634238B2Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereofNAKAYAMA MASAHIKO·Filed 2012·Granted Jan 21, 2014·2 cites·16 claims
- 4066US4922462AReversible memory structure for optical reading and writing and which is capable of erasureTOSHIBA KK·Filed 1988·Granted May 1, 1990·14 cites·13 claims
- 4161US10825500B2Data storage in synthetic antiferromagnets included in magnetic tunnel junctionsEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 3, 2020·0 cites·20 claims
- 4261US7525837B2Magnetoresistive effect element and magnetic memoryTOSHIBA KK·Filed 2008·Granted Apr 28, 2009·1 cites·12 claims
- 4361US2025113741A1Magnetoresistive devices and methods of manufacturing the sameEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 4460US8120948B2Data writing method for magnetoresistive effect element and magnetic memoryNAKAYAMA MASAHIKO·Filed 2009·Granted Feb 21, 2012·4 cites·10 claims
- 4560US2025322861A1Configuration bit with spin orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4660US2008253039A1Magnetoresistive effect elementNAGAMINE MAKOTO·Filed 2008·Application pending·0 cites
- 4759US12477955B2Magnetoresistive stack and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 18, 2025·0 cites·13 claims
- 4859US2025292815A1Anti-fuse and fuse in magnetoresistive deviceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4958US2025295040A1Mtj antifuse with trim enable and method of operationEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 5056US2023263071A1Magnetoresistive devices and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2022·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →