Inventor · disambiguated record
Sung Hyun Jo
Also filed as: JO SUNG HYUN
128 granted patents·9 pending applications·1,293 citations·filing 2007–2025
99Inventor score
Top patents by PatentIndex Score
137 records- 0198US9570683B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2016·Granted Feb 14, 2017·185 cites·20 claims
- 0298US9564587B1Three-dimensional two-terminal memory with enhanced electric field and segmented interconnectsCROSSBAR INC·Filed 2014·Granted Feb 7, 2017·39 cites·30 claims
- 0398US9425237B2Selector device for two-terminal memoryCROSSBAR INC·Filed 2014·Granted Aug 23, 2016·17 cites·20 claims
- 0498US8947908B2Hetero-switching layer in a RRAM device and methodCROSSBAR INC·Filed 2013·Granted Feb 3, 2015·26 cites·20 claims
- 0598US8467227B1Hetero resistive switching material layer in RRAM device and methodJO SUNG HYUN·Filed 2011·Granted Jun 18, 2013·74 cites·21 claims
- 0698US8274812B2Write and erase scheme for resistive memory deviceNAZARIAN HAGOP·Filed 2010·Granted Sep 25, 2012·60 cites·25 claims
- 0797US9166163B2Sub-oxide interface layer for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Oct 20, 2015·23 cites·29 claims
- 0897US9093635B2Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Jul 28, 2015·24 cites·19 claims
- 0997US8502185B2Switching device having a non-linear elementLU WEI·Filed 2011·Granted Aug 6, 2013·52 cites·20 claims
- 1097US8441835B2Interface control for improved switching in RRAMJO SUNG HYUN·Filed 2010·Granted May 14, 2013·52 cites·19 claims
- 1197US8351241B2Rectification element and method for resistive switching for non volatile memory deviceUNIV MICHIGAN·Filed 2010·Granted Jan 8, 2013·49 cites·25 claims
- 1297US8071972B2Silicon based nanoscale crossbar memoryLU WEI·Filed 2009·Granted Dec 6, 2011·92 cites·51 claims
- 1396US9570678B1Resistive RAM with preferental filament formation region and methodsCROSSBAR INC·Filed 2015·Granted Feb 14, 2017·16 cites·26 claims
- 1496US8658476B1Low temperature P+ polycrystalline silicon material for non-volatile memory deviceSUN XIN·Filed 2012·Granted Feb 25, 2014·69 cites·22 claims
- 1595US10134469B1Read operation with data latch and signal termination for 1TNR memory arrayCROSSBAR INC·Filed 2017·Granted Nov 20, 2018·16 cites·20 claims
- 1695US10121540B1Selector device for two-terminal memoryCROSSBAR INC·Filed 2017·Granted Nov 6, 2018·7 cites·20 claims
- 1795US9805794B1Enhanced erasing of two-terminal memoryCROSSBAR INC·Filed 2015·Granted Oct 31, 2017·21 cites·24 claims
- 1895US9685608B2Reduced diffusion in metal electrode for two-terminal memoryCROSSBAR INC·Filed 2014·Granted Jun 20, 2017·12 cites·20 claims
- 1995US8659933B2Hereto resistive switching material layer in RRAM device and methodCROSSBAR INC·Filed 2013·Granted Feb 25, 2014·24 cites·20 claims
- 2095US8411485B2Non-volatile variable capacitive device including resistive memory cellNAZARIAN HAGOP·Filed 2010·Granted Apr 2, 2013·20 cites·20 claims
- 2194US9112145B1Rectified switching of two-terminal memory via real time filament formationCROSSBAR INC·Filed 2013·Granted Aug 18, 2015·13 cites·17 claims
- 2294US8767441B2Switching device having a non-linear elementCROSSBAR INC·Filed 2013·Granted Jul 1, 2014·22 cites·20 claims
- 2394US8426306B1Three dimension programmable resistive random accessed memory array with shared bitline and methodGEE HARRY·Filed 2011·Granted Apr 23, 2013·20 cites·16 claims
- 2493US9761635B1Selector device for two-terminal memoryCROSSBAR INC·Filed 2016·Granted Sep 12, 2017·10 cites·23 claims
- 2593US9627443B2Three-dimensional oblique two-terminal memory with enhanced electric fieldCROSSBAR INC·Filed 2014·Granted Apr 18, 2017·13 cites·20 claims
- 2693US9620206B2Memory array architecture with two-terminal memory cellsCROSSBAR INC·Filed 2015·Granted Apr 11, 2017·15 cites·19 claims
- 2793US9520561B1Controlling on-state current for two-terminal memoryCROSSBAR INC·Filed 2015·Granted Dec 13, 2016·10 cites·20 claims
- 2893US8569172B1Noble metal/non-noble metal electrode for RRAM applicationsJO SUNG HYUN·Filed 2012·Granted Oct 29, 2013·11 cites·21 claims
- 2992US10489700B1Neuromorphic logic for an array of high on/off ratio non-volatile memory cellsCROSSBAR INC·Filed 2015·Granted Nov 26, 2019·14 cites·20 claims
- 3092US9768234B2Resistive memory architecture and devicesCROSSBAR INC·Filed 2015·Granted Sep 19, 2017·12 cites·20 claims
- 3192US9685483B2Selector-based non-volatile cell fabrication utilizing IC-foundry compatible processCROSSBAR INC·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 3292US8723154B2Integration of an amorphous silicon resistive switching deviceJO SUNG HYUN·Filed 2010·Granted May 13, 2014·12 cites·43 claims
- 3392US8391049B2Resistor structure for a non-volatile memory device and methodJO SUNG HYUN·Filed 2010·Granted Mar 5, 2013·14 cites·27 claims
- 3491US11967376B2Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chipCROSSBAR INC·Filed 2022·Granted Apr 23, 2024·1 cites·19 claims
- 3591US11823739B2Physically unclonable function (PUF) generation involving high side programming of bitsCROSSBAR INC·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 3691US10134984B1Two-terminal memory electrode comprising a non-continuous contact surfaceCROSSBAR INC·Filed 2014·Granted Nov 20, 2018·10 cites·20 claims
- 3791US9735358B2Noble metal / non-noble metal electrode for RRAM applicationsCROSSBAR INC·Filed 2016·Granted Aug 15, 2017·6 cites·26 claims
- 3891US9590013B2Device switching using layered device structureCROSSBAR INC·Filed 2014·Granted Mar 7, 2017·7 cites·20 claims
- 3990US11790999B2Resistive random access memory erase techniques and apparatusCROSSBAR INC·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 4090US8971088B1Multi-level cell operation using zinc oxide switching material in non-volatile memory deviceJO SUNG HYUN·Filed 2012·Granted Mar 3, 2015·14 cites·19 claims
- 4189US10910561B1Reduced diffusion in metal electrode for two-terminal memoryCROSSBAR INC·Filed 2017·Granted Feb 2, 2021·5 cites·18 claims
- 4289US9520557B2Silicon based nanoscale crossbar memoryUNIV MICHIGAN REGENTS·Filed 2015·Granted Dec 13, 2016·5 cites·20 claims
- 4389US9324942B1Resistive memory cell with solid state diodeCROSSBAR INC·Filed 2013·Granted Apr 26, 2016·7 cites·20 claims
- 4488US10211397B1Threshold voltage tuning for a volatile selection deviceCROSSBAR INC·Filed 2015·Granted Feb 19, 2019·6 cites·20 claims
- 4588US10096362B1Switching block configuration bit comprising a non-volatile memory cellCROSSBAR INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 4687US10541025B2Switching block configuration bit comprising a non-volatile memory cellCROSSBAR INC·Filed 2018·Granted Jan 21, 2020·6 cites·20 claims
- 4787US9847130B1Selector device for two-terminal memoryCROSSBAR INC·Filed 2016·Granted Dec 19, 2017·3 cites·20 claims
- 4887US9735357B2Resistive memory cell with intrinsic current controlCROSSBAR INC·Filed 2016·Granted Aug 15, 2017·6 cites·20 claims
- 4987US9613694B1Enhanced programming of two-terminal memoryCROSSBAR INC·Filed 2015·Granted Apr 4, 2017·9 cites·31 claims
- 5087US9601692B1Hetero-switching layer in a RRAM device and methodCROSSBAR INC·Filed 2015·Granted Mar 21, 2017·9 cites·21 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Sung Hyun Jo files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →