Inventor · disambiguated record
Subhadeep Kal
Also filed as: KAL SUBHADEEP
28 granted patents·7 pending applications·148 citations·filing 2016–2024
95Inventor score
Files withTOKYO ELECTRON LTD35
Top patents by PatentIndex Score
35 records- 0198US10991626B2Method for controlling transistor delay of nanowire or nanosheet transistor devicesTOKYO ELECTRON LTD·Filed 2020·Granted Apr 27, 2021·6 cites·13 claims
- 0297US11631671B23D complementary metal oxide semiconductor (CMOS) device and method of forming the sameTOKYO ELECTRON LTD·Filed 2020·Granted Apr 18, 2023·5 cites·23 claims
- 0397US11264274B2Reverse contact and silicide process for three-dimensional logic devicesTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·5 cites·20 claims
- 0497US10833078B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2018·Granted Nov 10, 2020·34 cites·20 claims
- 0597US9997598B2Three-dimensional semiconductor device and method of fabricationTOKYO ELECTRON LTD·Filed 2017·Granted Jun 12, 2018·26 cites·20 claims
- 0696US10685887B2Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) deviceTOKYO ELECTRON LTD·Filed 2018·Granted Jun 16, 2020·26 cites·19 claims
- 0795US10714391B2Method for controlling transistor delay of nanowire or nanosheet transistor devicesTOKYO ELECTRON LTD·Filed 2018·Granted Jul 14, 2020·11 cites·16 claims
- 0894US10378105B2Selective deposition with surface treatmentTOKYO ELECTRON LTD·Filed 2017·Granted Aug 13, 2019·12 cites·5 claims
- 0989US12336274B2Self-aligned method for vertical recess for 3D device integrationTOKYO ELECTRON LTD·Filed 2022·Granted Jun 17, 2025·1 cites·20 claims
- 1089US9984890B2Isotropic silicon and silicon-germanium etching with tunable selectivityTOKYO ELECTRON LTD·Filed 2017·Granted May 29, 2018·6 cites·20 claims
- 1185US10573564B2Method for fabricating NFET and PFET nanowire devicesTOKYO ELECTRON LTD·Filed 2018·Granted Feb 25, 2020·5 cites·20 claims
- 1284US11444082B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 1384US9748110B2Method and system for selective spacer etch for multi-patterning schemesTOKYO ELECTRON LTD·Filed 2016·Granted Aug 29, 2017·4 cites·10 claims
- 1480US11424123B2Forming a semiconductor feature using atomic layer etchTOKYO ELECTRON LTD·Filed 2020·Granted Aug 23, 2022·1 cites·20 claims
- 1580US10923356B2Gas phase etch with controllable etch selectivity of silicon-germanium alloysTOKYO ELECTRON LTD·Filed 2019·Granted Feb 16, 2021·2 cites·19 claims
- 1679US11322401B2Reverse contact and silicide process for three-dimensional semiconductor devicesTOKYO ELECTRON LTD·Filed 2020·Granted May 3, 2022·1 cites·20 claims
- 1777US10971372B2Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masksTOKYO ELECTRON LTD·Filed 2016·Granted Apr 6, 2021·2 cites·17 claims
- 1865US2025224677A1Selective deposition on metal-containing mask using promoterTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1961US11538691B2Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masksTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·16 claims
- 2058US11380554B2Gas phase etching system and methodTOKYO ELECTRON LTD·Filed 2020·Granted Jul 5, 2022·0 cites·16 claims
- 2158US2025054809A1Fully self-aligned via with graphene capTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2256US12444614B2Etch selectivity modulation by fluorocarbon treatmentTOKYO ELECTRON LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 2355US12512327B2Surface modification to achieve selective isotropic etchTOKYO ELECTRON LTD·Filed 2022·Granted Dec 30, 2025·0 cites·19 claims
- 2455US12272558B2Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modificationTOKYO ELECTRON LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2553US12261053B2Substrate processing with selective etchingTOKYO ELECTRON LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 2653US2024405022A1Non-planar transistor structures and methods of manufacturing thereofTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2752US12261054B2Substrate processing with material modification and removalTOKYO ELECTRON LTD·Filed 2022·Granted Mar 25, 2025·0 cites·21 claims
- 2852US11322350B2Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectricsTOKYO ELECTRON LTD·Filed 2020·Granted May 3, 2022·0 cites·21 claims
- 2952US2025308915A1Selective etching of silicon adjacent to silicon-germaniumTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3051US11715643B2Gas phase etch with controllable etch selectivity of metalsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 1, 2023·0 cites·16 claims
- 3150US2025311261A1Method for semiconductor processingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3250US2025287668A1Method for semiconductor manufacturingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3348US10580660B2Gas phase etching system and methodTOKYO ELECTRON LTD·Filed 2016·Granted Mar 3, 2020·0 cites·15 claims
- 3446US11557479B2Methods for EUV inverse patterning in processing of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
- 3536US2017207103A1Gas phase etch of amorphous and poly-crystalline silicon from high aspect ratio features with high selectivity towards various filmsTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →