Inventor · disambiguated record
Sun-Hak Lee
Also filed as: LEE SUN-HAK
20 granted patents·3 pending applications·86 citations·filing 1998–2024
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD7FAIRCHILD KR SEMICONDUCTOR LTD3FAIRCHILD KOREA SEMICONDUCTOR LTD2LEE JUNG HWAN2POSTECH ACAD IND FOUND2
Top patents by PatentIndex Score
23 records- 0178US9947742B2Power semiconductor deviceFAIRCHILD KOREA SEMICONDUCTOR LTD·Filed 2016·Granted Apr 17, 2018·2 cites·20 claims
- 0278US8569252B2Nucleolin specific aptamer and use thereofLEE JUNG-HWAN·Filed 2010·Granted Oct 29, 2013·2 cites·8 claims
- 0375US6507080B2MOS transistor and fabrication method thereofFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Granted Jan 14, 2003·18 cites·11 claims
- 0472US10312322B2Power semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 4, 2019·1 cites·20 claims
- 0571US7618854B2High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 17, 2009·4 cites·10 claims
- 0668US8476700B2Semiconductor device and method of fabricating the sameKIM YOUNG-MOK·Filed 2010·Granted Jul 2, 2013·4 cites·6 claims
- 0764US6867476B2Vertical double diffused MOSFET and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·11 cites·19 claims
- 0862US9018185B2Method of diagnosing cancer using a nucleolin specific aptamerPOSTECH ACAD IND FOUND·Filed 2013·Granted Apr 28, 2015·0 cites·7 claims
- 0962US5913114AMethod of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 15, 1999·21 cites·10 claims
- 1061US9018186B2Method of treating hyperproliferation of cells using a nucleolin specific aptamerPOSTECH ACAD IND FOUND·Filed 2013·Granted Apr 28, 2015·0 cites·8 claims
- 1160US2025275163A1Manufacturing method of high power semiconductor deviceSK KEYFOUNDRY INC·Filed 2024·Application pending·0 cites
- 1259US11183495B2Power semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 1358US9257502B2Level shift power semiconductor deviceFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2013·Granted Feb 9, 2016·1 cites·20 claims
- 1457US8124756B2Method of preparing 5′-amino-linker oligonucleotides derivatives and analogous 5′-labeled-linker oligonucleotides therefromLEE JUNG-HWAN·Filed 2009·Granted Feb 28, 2012·0 cites·16 claims
- 1557US7381621B2Methods of fabricating high voltage MOSFET having doped buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 3, 2008·1 cites·8 claims
- 1657US6194760B1Double-diffused MOS transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 27, 2001·17 cites·13 claims
- 1756US12057656B2Receptacle connectorLS MTRON LTD·Filed 2021·Granted Aug 6, 2024·0 cites·12 claims
- 1848US6853040B2MOS transistor and fabrication method thereofFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Feb 8, 2005·3 cites·6 claims
- 1947US10366981B2Power semiconductor devicesFAIRCHILD KOREA SEMICONDUCTOR LTD·Filed 2015·Granted Jul 30, 2019·0 cites·19 claims
- 2044US2009009434A1High power address driver and display device employing the sameKIM YONG-DON·Filed 2008·Application pending·0 cites
- 2143US7446000B2Method of fabricating semiconductor device having gate dielectrics with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 2243US2006011981A1High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONIS CO LTD·Filed 2005·Application pending·0 cites
- 2342US7176538B2High voltage MOSFET having doped buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·1 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →