Inventor · disambiguated record
Su-Hao Liu
Also filed as: LIU SU-HAO
81 granted patents·30 pending applications·654 citations·filing 2011–2025
98Inventor score
Top patents by PatentIndex Score
111 records- 0197US11848361B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 0297US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
- 0397US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0497US10347762B1Field effect transistor contact with reduced contact resistance using implantation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·20 cites·20 claims
- 0596US11257952B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 0696US10658510B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0796US9093514B2Strained and uniform doping technique for FINFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 28, 2015·518 cites·22 claims
- 0896US9029226B2Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·25 cites·19 claims
- 0995US11257911B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 1093US10763168B2Semiconductor structure with doped via plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·10 cites·20 claims
- 1191US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 1291US9812451B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·5 cites·20 claims
- 1390US11855146B2Melt anneal source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1490US11145751B2Semiconductor structure with doped contact plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·6 cites·20 claims
- 1590US8674453B2Mechanisms for forming stressor regions in a semiconductor deviceTSAI CHUN HSIUNG·Filed 2011·Granted Mar 18, 2014·12 cites·20 claims
- 1686US10643892B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·3 cites·20 claims
- 1785US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1885US12205994B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1985US12015055B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 2085US11646377B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 2185US11211289B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 2285US10515963B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·2 cites·20 claims
- 2385US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2484US11955553B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 2584US11227918B2Melt anneal source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·21 claims
- 2684US10269799B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 2783US12300740B2Metal layer protection during wet etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2883US12068195B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 2983US2025324653A1METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANTTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3082US12432963B2Device having an air gap adjacent to a contact plug and covered by a doped dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 3182US11515206B2Semiconductor structure with doped via plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
- 3282US2025351423A1Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3381US12224327B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 3481US11742386B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 3580US2024395606A1Semiconductor device with connecting structure having a doped layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3680US2024395871A1Transistor contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3780US2025096041A1Bottom lateral expansion of contact plugs through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3880US2025359295A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3979US12501647B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 4079US12300496B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 4179US12154949B2Transistor contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 4279US12112977B2Reducing spacing between conductive features through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 4379US12107086B2Field effect transistor contact with reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 4479US2024387180A1Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4579US2025344424A1Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4679US2024387661A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4779US2024363736A1Variable size fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4879US2024363399A1Reducing spacing between conductive features through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4978US11594636B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 28, 2023·0 cites·20 claims
- 5078US10347720B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →