Inventor · disambiguated record
Subhash Srinivas Pidaparthi
Also filed as: PIDAPARTHI SUBHASH SRINIVAS
22 granted patents·10 pending applications·24 citations·filing 2007–2025
92Inventor score
Top patents by PatentIndex Score
32 records- 0196US11315884B2Method and system for fabricating fiducials using selective area growthNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Apr 26, 2022·5 cites·20 claims
- 0295US11929440B2Fabrication method for JFET with implant isolationNEXGEN POWER SYSTEMS INC·Filed 2023·Granted Mar 12, 2024·2 cites·20 claims
- 0394US12155204B2Method and system for fin-based voltage clampSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 26, 2024·2 cites·20 claims
- 0494US11335810B2Method and system for fabrication of a vertical fin-based field effect transistorNEXGEN POWER SYSTEMS INC·Filed 2020·Granted May 17, 2022·3 cites·14 claims
- 0591US11637209B2JFET with implant isolationNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Apr 25, 2023·2 cites·16 claims
- 0684US12274086B2Fabrication method for JFET with implant isolationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Apr 8, 2025·0 cites·17 claims
- 0781US12272654B2Method and system for fabricating fiducials using selective area growthSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 0879US8154088B1Semiconductor topography and method for reducing gate induced drain leakage (GIDL) in MOS transistorsKHOUEIR ANTOINE·Filed 2007·Granted Apr 10, 2012·10 cites·13 claims
- 0979US2025212467A1Fabrication method for jfet with implant isolationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1076US12125914B2Method and system for fabrication of a vertical fin-based field effect transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 1175US12334352B2Method and system for etch depth control in III-V semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1275US2025031416A1Coupled guard rings for edge terminationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1374US2024274602A1Self-aligned isolation for self-aligned contacts for vertical fetsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1474US2025055276A1Method and system for a fin-based voltage clampSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1574US2025006784A1Method and system of junction termination extension in high voltage semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1673US11935838B2Method and system for fabricating fiducials using selective area growthNEXGEN POWER SYSTEMS INC·Filed 2022·Granted Mar 19, 2024·0 cites·21 claims
- 1772US12262557B2Methods and systems to improve uniformity in power FET arraysSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Mar 25, 2025·0 cites·12 claims
- 1871US11735671B2Method and system for fabrication of a vertical fin-based field effect transistorNEXGEN POWER SYSTEMS INC·Filed 2022·Granted Aug 22, 2023·0 cites·12 claims
- 1970US12484294B2Vertical fin-based field effect transistor (FinFET) with neutralized fin tipsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 2070US12224344B2Method and system for control of sidewall orientation in vertical gallium nitride field effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Feb 11, 2025·0 cites·14 claims
- 2169US2025194236A1Method and system to improve uniformity in power fet arraysSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 2268US2023420547A1Vertical gallium nitride based fets with regrown source contactsNEXGEN POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2367US12136645B2Coupled guard rings for edge terminationSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Nov 5, 2024·0 cites·13 claims
- 2467US11996407B2Self-aligned isolation for self-aligned contacts for vertical FETSSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted May 28, 2024·0 cites·17 claims
- 2565US2025151319A1Method and system for control of sidewall orientation in vertical gallium nitride field effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 2664US11948801B2Method and system for etch depth control in III-V semiconductor devicesNEXGEN POWER SYSTEMS INC·Filed 2021·Granted Apr 2, 2024·0 cites·18 claims
- 2764US11916134B2Regrowth uniformity in GaN vertical devicesNEXGEN POWER SYSTEMS INC·Filed 2020·Granted Feb 27, 2024·0 cites·20 claims
- 2864US11728415B2Method for regrown source contacts for vertical gallium nitride based FETSNEXGEN POWER SYSTEMS INC·Filed 2021·Granted Aug 15, 2023·0 cites·12 claims
- 2962US12113101B2Method and system of junction termination extension in high voltage semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Oct 8, 2024·0 cites·19 claims
- 3056US2023260996A1Vertical fin-based field effect transistor (finfet) with varying conductivity regionsNEXGEN POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 3152US12381159B2Method and system for fabricating fiducials for processing of semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Aug 5, 2025·0 cites·13 claims
- 3251US2022254918A1Methods and systems for fabrication of vertical fin-based jfetsNEXGEN POWER SYSTEMS INC·Filed 2022·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Subhash Srinivas Pidaparthi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →