Inventor · disambiguated record
Susumu Sonokawa
Also filed as: SONOKAWA SUSUMU
20 granted patents·3 pending applications·130 citations·filing 1990–2019
93Inventor score
Top patents by PatentIndex Score
23 records- 0182US9260796B2Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereofHOSHI RYOJI·Filed 2008·Granted Feb 16, 2016·5 cites·9 claims
- 0282US6506251B1Method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jan 14, 2003·19 cites·16 claims
- 0378US6565822B1Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·13 cites·19 claims
- 0470US7594966B2Method for producing a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Sep 29, 2009·8 cites·5 claims
- 0567US5131974AMethod of controlling oxygen concentration in single crystal and an apparatus thereforSHINETSU HANDOTAI KK·Filed 1990·Granted Jul 21, 1992·20 cites·3 claims
- 0664US6228165B1Method of manufacturing crystal of silicon using an electric potentialSEH AMERICA INC·Filed 1999·Granted May 8, 2001·18 cites·19 claims
- 0763US9337013B2Silicon wafer and method for producing the sameFUSEGAWA IZUMI·Filed 2012·Granted May 10, 2016·2 cites·2 claims
- 0860US11821104B2Apparatus for manufacturing single crystalSHINETSU HANDOTAI KK·Filed 2019·Granted Nov 21, 2023·0 cites·12 claims
- 0957US5972106ADevice and method for producing single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Oct 26, 1999·18 cites·18 claims
- 1056US5882398AMethod of manufacturing single crystal of siliconSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 16, 1999·12 cites·11 claims
- 1154US7204881B2Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing itSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 17, 2007·4 cites·29 claims
- 1252US9422635B2Single crystal production apparatus and single crystal production method having pedestal with groovesIWASAKI ATSUSHI·Filed 2012·Granted Aug 23, 2016·0 cites·8 claims
- 1351US7201801B2Heater for manufacturing a crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 10, 2007·1 cites·25 claims
- 1449US9200380B2Single-crystal manufacturing method and single-crystal manufacturing apparatusMATSUMOTO SUGURU·Filed 2009·Granted Dec 1, 2015·1 cites·3 claims
- 1548US8441623B2Method for detecting the diameter of a single crystal and single crystal pulling apparatusYANAGIMACHI TAKAHIRO·Filed 2008·Granted May 14, 2013·1 cites·16 claims
- 1648US5269875AMethod of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the methodSHINETSU HANDOTAI KK·Filed 1992·Granted Dec 14, 1993·8 cites·2 claims
- 1747US2010116195A1Method for growing silicon single crystalSHINETSU HANDOTAI KK·Filed 2008·Application pending·0 cites
- 1846US2010139549A1Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single CrystalSHINETSU HANDOTAI KK·Filed 2006·Application pending·0 cites
- 1945US7396405B2Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Jul 8, 2008·0 cites·10 claims
- 2044US9777394B2Method of producing silicon single crystal ingotSHINETSU HANDOTAI KK·Filed 2014·Granted Oct 3, 2017·0 cites·3 claims
- 2141US2006191468A1Process for producing single crystalSHINETSU HANDOTAI KK·Filed 2004·Application pending·0 cites
- 2238US10036100B2Apparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2015·Granted Jul 31, 2018·0 cites·5 claims
- 2331US9234296B2Apparatus having heat insulating cylinder with step portion for manufacturing semiconductor single crystalTAKASHIMA SHOU·Filed 2011·Granted Jan 12, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →