Inventor · disambiguated record
Swapnil Lengade
Also filed as: LENGADE SWAPNIL · LENGADE SWAPNIL A
43 granted patents·6 pending applications·225 citations·filing 2011–2025
97Inventor score
Files withMICRON TECHNOLOGY INC39INTEL CORP5LODESTAR LICENSING GROUP LLC2COLLINS DALE W1LENGADE SWAPNIL1
Top patents by PatentIndex Score
49 records- 0199US10163977B1Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 25, 2018·34 cites·14 claims
- 0298US10903276B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 26, 2021·37 cites·20 claims
- 0398US9166158B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·28 cites·16 claims
- 0496US10008665B1Doping of selector and storage materials of a memory cellINTEL CORP·Filed 2016·Granted Jun 26, 2018·24 cites·17 claims
- 0596US9281471B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·14 cites·13 claims
- 0695US10256406B2Semiconductor structures including liners and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 9, 2019·12 cites·21 claims
- 0795US9673256B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·9 cites·20 claims
- 0894US10727405B2Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 28, 2020·4 cites·24 claims
- 0992US10217936B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·4 cites·20 claims
- 1092US10177198B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 8, 2019·6 cites·17 claims
- 1191US10069069B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 4, 2018·4 cites·19 claims
- 1291US9306159B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·10 cites·14 claims
- 1390US10062844B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 28, 2018·4 cites·18 claims
- 1487US10079340B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 18, 2018·6 cites·23 claims
- 1586US10651381B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·2 cites·17 claims
- 1686US10510805B2Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 17, 2019·4 cites·18 claims
- 1785US9324945B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Apr 26, 2016·5 cites·48 claims
- 1884US10224479B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 5, 2019·4 cites·16 claims
- 1983US10680175B1Memory structures having improved write enduranceINTEL CORP·Filed 2018·Granted Jun 9, 2020·3 cites·27 claims
- 2082US12279431B2Integrated assemblies and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Apr 15, 2025·0 cites·21 claims
- 2182US10720574B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 21, 2020·1 cites·20 claims
- 2282US10546895B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 28, 2020·2 cites·17 claims
- 2382US2025240962A1Integrated assemblies and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 2481US12342542B2Integrated circuitry comprising a memory array comprising strings of memory cells and comprising a stack containing non-stoichiometric silicon nitrideMICRON TECHNOLOGY INC·Filed 2023·Granted Jun 24, 2025·0 cites·18 claims
- 2581US2025280539A1Integrated Circuitry Comprising a Memory Array Comprising Strings of Memory Cells and Methods Used in Forming a Memory Array Comprising Strings of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2680US11038107B2Semiconductor devices including liners, and related systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jun 15, 2021·2 cites·23 claims
- 2779US12426261B2Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 23, 2025·0 cites·18 claims
- 2877US11706924B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 18, 2023·0 cites·10 claims
- 2977US8637846B1Semiconductor structure including a zirconium oxide materialCOLLINS DALE W·Filed 2012·Granted Jan 28, 2014·3 cites·26 claims
- 3076US11195998B2Memory structures having improved write enduranceINTEL CORP·Filed 2020·Granted Dec 7, 2021·1 cites·18 claims
- 3174US10439000B2Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 8, 2019·0 cites·17 claims
- 3272US11329064B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted May 10, 2022·0 cites·22 claims
- 3371US10347831B2Doping of selector and storage materials of a memory cellINTEL CORP·Filed 2018·Granted Jul 9, 2019·2 cites·16 claims
- 3468US11792983B2Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 17, 2023·0 cites·21 claims
- 3567US11081644B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 3, 2021·0 cites·11 claims
- 3667US10957855B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 23, 2021·0 cites·12 claims
- 3767US10950791B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 3865US11552090B2Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 10, 2023·0 cites·11 claims
- 3965US2024215246A1Methods of forming microelectronic devices with nitrogen-rich insulative structures, and related memory devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4064US11152427B2Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 19, 2021·0 cites·16 claims
- 4163US11114615B2Chalcogenide memory device components and compositionMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 7, 2021·0 cites·18 claims
- 4257US9006702B2Semiconductor structure including a zirconium oxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 4355US2024074177A1Microelectronic devices with a tiered stack of conductive, insulative, and partially-sacrificial structures, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4454US12004346B2Microelectronic devices with nitrogen-rich insulative structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 4, 2024·0 cites·4 claims
- 4553US2015171321A1Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfacesMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 4648US2015056798A1Methods of forming metal oxideMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4747US11133461B2Laminate diffusion barriers and related devices and methodsINTEL CORP·Filed 2014·Granted Sep 28, 2021·0 cites·11 claims
- 4846US8859382B2Methods of forming metal oxide and memory cellsROCKLEIN NOEL·Filed 2011·Granted Oct 14, 2014·0 cites·28 claims
- 4940US9093636B2Incorporation of oxygen into memory cellsLENGADE SWAPNIL·Filed 2012·Granted Jul 28, 2015·0 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →