Inventor · disambiguated record
Sze-Hon Kwan
Also filed as: BENCUYA IZAK · KWAN SZE-HON
7 granted patents·855 citations·filing 1992–1997
91Inventor score
Technology areasH10D
Top patents by PatentIndex Score
7 records- 0197US5567634AMethod of fabricating self-aligned contact trench DMOS transistorsNAT SEMICONDUCTOR CORP·Filed 1995·Granted Oct 22, 1996·207 cites·1 claims
- 0294US5665619AMethod of fabricating a self-aligned contact trench DMOS transistor structureNAT SEMICONDUCTOR CORP·Filed 1996·Granted Sep 9, 1997·136 cites·3 claims
- 0393US5879994ASelf-aligned method of fabricating terrace gate DMOS transistorNAT SEMICONDUCTOR CORP·Filed 1997·Granted Mar 9, 1999·132 cites·17 claims
- 0493US5532179AMethod of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereofSILICONIX INC·Filed 1995·Granted Jul 2, 1996·112 cites·2 claims
- 0593US5316959ATrenched DMOS transistor fabrication using six masksSILICONIX INC·Filed 1992·Granted May 31, 1994·117 cites·8 claims
- 0691US5468982ATrenched DMOS transistor with channel block at cell trench cornersSILICONIX INC·Filed 1994·Granted Nov 21, 1995·89 cites·21 claims
- 0787US5910669AField effect Trench transistor having lightly doped epitaxial region on the surface portion thereofSILICONIX INC·Filed 1992·Granted Jun 8, 1999·62 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →