Inventor · disambiguated record
Szu-Hsien Liu
Also filed as: LIU SZU-HSIEN
19 granted patents·8 pending applications·25 citations·filing 2006–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24LIU SZU-HSIEN1LIU WUN-CHIH1TECO ELECTRIC & MACHINERY CO LTD1
Top patents by PatentIndex Score
27 records- 0197US11677022B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0296US12021140B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0395US10340357B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·9 cites·20 claims
- 0494US12191365B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 0590US10516029B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·4 cites·20 claims
- 0687US12356658B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 0787US2025311292A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0884US12261218B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 0983US2024379788A1Thicker corner of a gate dielectric structure around a recessed gate electrode for an mv deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1077US11799007B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 1177US10950708B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·1 cites·20 claims
- 1276US9853149B1Floating grid and crown-shaping poly for improving ILD CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·2 cites·20 claims
- 1376US2025203927A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1474US11810973B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 1574US11569363B2Dishing prevention dummy structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1673US11004844B2Recessed STI as the gate dielectric of HV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·1 cites·20 claims
- 1773US2024379664A1Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1872US11469307B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 1967US12349454B2Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2067US10916542B2Recessed STI as the gate dielectric of HV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 9, 2021·1 cites·20 claims
- 2165US12368349B2Composite two-phase fluid cooling motor and composite two-phase fluid cooling device thereofTECO ELECTRIC & MACHINERY CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·9 claims
- 2263US2021280577A1Recessed STI as the Gate Dielectric of HV DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2358US10937891B2Spacer structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 2, 2021·0 cites·20 claims
- 2457US2011026286A1Transformer with Power Factor Compensation and A DC/AC Inverter Constructed TherebyLIU WUN-CHIH·Filed 2009·Application pending·0 cites
- 2552US2025089324A1Methods for forming gate oxide layer for high-voltage transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2649US10868141B2Spacer structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 15, 2020·0 cites·17 claims
- 2738US2007032006A1Fabrication method of flash memoryLIU SZU-HSIEN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →