Inventor · disambiguated record
Szu-Yu Wang
Also filed as: WANG SZU-YU
45 granted patents·13 pending applications·336 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37MACRONIX INT CO LTD14LUE HANG-TING4WANG SZU-YU2IND TECH RES INST1
Top patents by PatentIndex Score
58 records- 0197US8315095B2Multi-gate bandgap engineered memoryLUE HANG-TING·Filed 2011·Granted Nov 20, 2012·28 cites·10 claims
- 0296US7879738B2Charge trapping dielectric structure for non-volatile memoryMACRONIX INT CO LTD·Filed 2006·Granted Feb 1, 2011·40 cites·4 claims
- 0396US7688626B2Depletion mode bandgap engineered memoryMACRONIX INT CO LTD·Filed 2008·Granted Mar 30, 2010·32 cites·16 claims
- 0496US7463530B2Operating method of non-volatile memory deviceMACRONIX INT CO LTD·Filed 2006·Granted Dec 9, 2008·44 cites·18 claims
- 0594US8264028B2Non-volatile memory cells, memory arrays including the same and methods of operating cells and arraysLUE HANG-TING·Filed 2006·Granted Sep 11, 2012·27 cites·8 claims
- 0693US7642585B2Non-volatile memory cells, memory arrays including the same and methods of operating cells and arraysMACRONIX INT CO LTD·Filed 2006·Granted Jan 5, 2010·30 cites·50 claims
- 0791US9209190B2Deep trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 8, 2015·13 cites·20 claims
- 0891US9184041B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 10, 2015·9 cites·18 claims
- 0991US7060594B2Memory device and method of manufacturing including deuterated oxynitride charge trapping structureMACRONIX INT CO LTD·Filed 2004·Granted Jun 13, 2006·49 cites·15 claims
- 1091US2025359336A1Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1190US9871095B2Stacked capacitor with enhanced capacitance and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·6 cites·20 claims
- 1289US9754827B1Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·4 cites·20 claims
- 1388US12471379B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1488US10833026B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 1588US10276513B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·20 claims
- 1687US9646938B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·4 cites·20 claims
- 1785US8094497B2Multi-gate bandgap engineered memoryLUE HANG-TING·Filed 2010·Granted Jan 10, 2012·4 cites·26 claims
- 1883US10276678B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·2 cites·20 claims
- 1983US8730726B2Multi-gate bandgap engineered memoryMACRONIX INT CO LTD·Filed 2012·Granted May 20, 2014·3 cites·14 claims
- 2082US7772072B2Method for manufacturing non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Aug 10, 2010·9 cites·23 claims
- 2182US2025338657A1Deep trench isolation structure for image sensor narrowed by epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2281US12113071B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2379US2024347612A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2477US12046649B2Method for forming semiconductor structure for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·20 claims
- 2576US11735635B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2676US10497860B2Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 3, 2019·3 cites·20 claims
- 2775US2025142847A1Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2874US11532642B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2974US2024355855A1Deep trench isolation structure for image sensor narrowed by epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3072US7529137B2Methods of operating bandgap engineered memoryMACRONIX INT CO LTD·Filed 2007·Granted May 5, 2009·4 cites·12 claims
- 3171US9281203B2Silicon dot formation by direct self-assembly method for flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 8, 2016·2 cites·19 claims
- 3269US12218184B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 3368US9401434B2E-flash cell band engineering for erasing speed enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·2 cites·20 claims
- 3468US9385136B2Silicon dot formation by self-assembly method and selective silicon growth for flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 5, 2016·1 cites·20 claims
- 3567US7405125B2Tunnel oxynitride in flash memoriesMACRONIX INT CO LTD·Filed 2004·Granted Jul 29, 2008·10 cites·41 claims
- 3666US11588031B2Semiconductor structure for memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 21, 2023·0 cites·20 claims
- 3765US11069785B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 3865US10998494B2Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 3965US9755860B2Method of performing uplink channel estimation and base station using the sameIND TECH RES INST·Filed 2016·Granted Sep 5, 2017·2 cites·22 claims
- 4062US2025280617A1Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4160US2025311436A1Hybrid bulk semiconductor and semiconductor on insulator (soi) substrate and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4255US10777649B2Silicon nano-tip thin film for flash memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 15, 2020·0 cites·17 claims
- 4355US10170539B2Stacked capacitor with enhanced capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·0 cites·20 claims
- 4455US9064821B2Silicon dot formation by self-assembly method and selective silicon growth for flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 23, 2015·0 cites·20 claims
- 4553US8149628B2Operating method of non-volatile memory deviceLUE HANG-TING·Filed 2008·Granted Apr 3, 2012·0 cites·13 claims
- 4649US2008108194A1Memory device and manufacturing method thereofWANG SZU-YU·Filed 2007·Application pending·0 cites
- 4748US9577077B2Well controlled conductive dot size in flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·0 cites·23 claims
- 4848US9257636B2Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 9, 2016·0 cites·20 claims
- 4947US9929007B2e-Flash Si dot nitrogen passivation for trap reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 27, 2018·0 cites·21 claims
- 5046US10497560B2Uniformity control for Si dot size in flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 3, 2019·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →