Inventor · disambiguated record
Takashi Aigo
Also filed as: AIGO TAKASHI
12 granted patents·4 pending applications·54 citations·filing 1993–2020
87Inventor score
Top patents by PatentIndex Score
16 records- 0188US10626520B2Method for producing epitaxial silicon carbide single crystal waferSHOWA DENKO KK·Filed 2016·Granted Apr 21, 2020·6 cites·16 claims
- 0277US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0376US10435813B2Epitaxial growth method for silicon carbideSHOWA DENKO KK·Filed 2016·Granted Oct 8, 2019·2 cites·7 claims
- 0464US11114295B2Epitaxial silicon carbide single crystal wafer and process for producing the sameSHOWA DENKO KK·Filed 2020·Granted Sep 7, 2021·0 cites·2 claims
- 0564US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 0653US2015075422A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 0751US10727047B2Epitaxial silicon carbide single crystal wafer and process for producing the sameSHOWA DENKO KK·Filed 2016·Granted Jul 28, 2020·0 cites·2 claims
- 0847US5689124ASemiconductor deviceNIPPON STEEL CORP·Filed 1995·Granted Nov 18, 1997·15 cites·25 claims
- 0945US8927396B2Production process of epitaxial silicon carbide single crystal substrateAIGO TAKASHI·Filed 2011·Granted Jan 6, 2015·0 cites·7 claims
- 1044US2015361585A1Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic waferNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 1142US9957639B2Method for producing epitaxial silicon carbide waferNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Granted May 1, 2018·0 cites·18 claims
- 1242US5833749ACompound semiconductor substrate and process of producing sameNIPPON STEEL CORP·Filed 1996·Granted Nov 10, 1998·14 cites·8 claims
- 1342US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
- 1439US10450672B2Method for producing epitaxial silicon carbide wafersSHOWA DENKO KK·Filed 2015·Granted Oct 22, 2019·0 cites·17 claims
- 1537US2013320357A1Epitaxial silicon carbide single crystal substrate and method for producing sameAIGO TAKASHI·Filed 2012·Application pending·0 cites
- 1632US5438951AMethod of growing compound semiconductor on silicon waferNIPPON STEEL CORP·Filed 1993·Granted Aug 8, 1995·10 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →