Inventor · disambiguated record
Takashi Ando
Also filed as: ANDO TAKASHI
611 granted patents·115 pending applications·3,752 citations·filing 1981–2024
99Inventor score
Files withIBM513ANDO TAKASHI39TOYOTA MOTOR CO LTD14MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13SONY CORP12
Top patents by PatentIndex Score
726 records- 0199US10763177B1I/O device for gate-all-around transistorsIBM·Filed 2019·Granted Sep 1, 2020·40 cites·20 claims
- 0299US10700064B1Multi-threshold voltage gate-all-around field-effect transistor devices with common gatesIBM·Filed 2019·Granted Jun 30, 2020·89 cites·20 claims
- 0399US10490559B1Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensionsIBM·Filed 2018·Granted Nov 26, 2019·71 cites·16 claims
- 0499US10236217B1Stacked field-effect transistors (FETs) with shared and non-shared gatesIBM·Filed 2017·Granted Mar 19, 2019·50 cites·17 claims
- 0599US9748145B1Semiconductor devices with varying threshold voltage and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·494 cites·17 claims
- 0699US8637384B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2012·Granted Jan 28, 2014·374 cites·13 claims
- 0799US8637930B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2011·Granted Jan 28, 2014·99 cites·14 claims
- 0898US11430510B2Multi-level ferroelectric field-effect transistor devicesIBM·Filed 2020·Granted Aug 30, 2022·6 cites·19 claims
- 0998US11302810B1Ferroelectric field effect transistor with nanowire coreIBM·Filed 2020·Granted Apr 12, 2022·5 cites·20 claims
- 1098US11232824B1Non-volatile analog resistive memory cells implementing ferroelectric select transistorsIBM·Filed 2020·Granted Jan 25, 2022·16 cites·8 claims
- 1198US11205698B2Multiple work function nanosheet transistors with inner spacer modulationIBM·Filed 2020·Granted Dec 21, 2021·6 cites·20 claims
- 1298US10879308B1Stacked nanosheet 4T2R unit cell for neuromorphic computingIBM·Filed 2019·Granted Dec 29, 2020·42 cites·20 claims
- 1398US10825736B1Nanosheet with selective dipole diffusion into high-kIBM·Filed 2019·Granted Nov 3, 2020·44 cites·20 claims
- 1498US10734286B1Multiple dielectrics for gate-all-around transistorsIBM·Filed 2019·Granted Aug 4, 2020·32 cites·17 claims
- 1598US10553696B2Full air-gap spacers for gate-all-around nanosheet field effect transistorsIBM·Filed 2017·Granted Feb 4, 2020·21 cites·17 claims
- 1698US10381438B2Vertically stacked NFETS and PFETS with gate-all-around structureIBM·Filed 2017·Granted Aug 13, 2019·25 cites·11 claims
- 1798US10374039B1Enhanced field bipolar resistive RAM integrated with FDSOI technologyIBM·Filed 2018·Granted Aug 6, 2019·28 cites·20 claims
- 1898US10319846B1Multiple work function nanosheet field-effect transistors with differential interfacial layer thicknessIBM·Filed 2018·Granted Jun 11, 2019·28 cites·10 claims
- 1998US10269869B1High-density field-enhanced ReRAM integrated with vertical transistorsIBM·Filed 2017·Granted Apr 23, 2019·22 cites·19 claims
- 2098US9887351B1Multivalent oxide cap for analog switching resistive memoryIBM·Filed 2016·Granted Feb 6, 2018·19 cites·20 claims
- 2198US9793397B1Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistorIBM·Filed 2016·Granted Oct 17, 2017·31 cites·16 claims
- 2298US9761655B1Stacked planar capacitors with scaled EOTIBM·Filed 2016·Granted Sep 12, 2017·36 cites·20 claims
- 2398US9601546B1Scaled cross bar array with undercut electrodeIBM·Filed 2016·Granted Mar 21, 2017·26 cites·20 claims
- 2498US4502002AElectrostatically operated dust collectorMITSUBISHI HEAVY IND LTD·Filed 1982·Granted Feb 26, 1985·125 cites·3 claims
- 2597US11856798B2Resistive random-access memory random number generatorIBM·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 2697US11177366B2Gate induced drain leakage reduction in FinFETsIBM·Filed 2020·Granted Nov 16, 2021·4 cites·17 claims
- 2797US11152264B2Multi-Vt scheme with same dipole thickness for gate-all-around transistorsIBM·Filed 2020·Granted Oct 19, 2021·5 cites·20 claims
- 2897US10332809B1Method and structure to introduce strain in stack nanosheet field effect transistorIBM·Filed 2018·Granted Jun 25, 2019·15 cites·20 claims
- 2997US9985206B1Resistive switching memory stack for three-dimensional structureIBM·Filed 2017·Granted May 29, 2018·16 cites·17 claims
- 3097US9865703B2High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) processIBM·Filed 2015·Granted Jan 9, 2018·19 cites·7 claims
- 3197US9583486B1Stable work function for narrow-pitch devicesIBM·Filed 2015·Granted Feb 28, 2017·20 cites·8 claims
- 3297US9362282B1High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor materialIBM·Filed 2015·Granted Jun 7, 2016·16 cites·11 claims
- 3397US8034649B2Solid state imaging device, method of manufacturing the same, and imaging apparatusSONY CORP·Filed 2010·Granted Oct 11, 2011·13 cites·3 claims
- 3496US11915734B2Spin-orbit-torque magnetoresistive random-access memory with integrated diodeIBM·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 3596US11437102B1Memory erasure using proximity heatersIBM·Filed 2021·Granted Sep 6, 2022·5 cites·25 claims
- 3696US11309383B1Quad-layer high-k for metal-insulator-metal capacitorsIBM·Filed 2020·Granted Apr 19, 2022·4 cites·25 claims
- 3796US11139215B2Hybrid gate stack integration for stacked vertical transport field-effect transistorsIBM·Filed 2020·Granted Oct 5, 2021·3 cites·20 claims
- 3896US10553678B2Vertically stacked dual channel nanosheet devicesIBM·Filed 2017·Granted Feb 4, 2020·12 cites·10 claims
- 3996US10553679B2Formation of self-limited inner spacer for gate-all-around nanosheet FETIBM·Filed 2017·Granted Feb 4, 2020·14 cites·12 claims
- 4096US10546925B2Vertically stacked nFET and pFET with dual work functionIBM·Filed 2017·Granted Jan 28, 2020·10 cites·12 claims
- 4196US10096773B1Crossbar resistive memory array with highly conductive copper/copper alloy electrodes and silver/silver alloys electrodesIBM·Filed 2017·Granted Oct 9, 2018·12 cites·1 claims
- 4296US9613870B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2015·Granted Apr 4, 2017·13 cites·20 claims
- 4396US9613866B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2016·Granted Apr 4, 2017·11 cites·13 claims
- 4496US9484412B1Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate sameIBM·Filed 2015·Granted Nov 1, 2016·14 cites·20 claims
- 4596US9425279B1Semiconductor device including high-K metal gate having reduced threshold voltage variationIBM·Filed 2015·Granted Aug 23, 2016·13 cites·4 claims
- 4696US8647972B1Multi-layer work function metal replacement gateANDO TAKASHI·Filed 2012·Granted Feb 11, 2014·40 cites·19 claims
- 4796US8183603B2Solid-state imaging device for inhibiting dark currentYAMAGUCHI TETSUJI·Filed 2007·Granted May 22, 2012·24 cites·28 claims
- 4895US11295988B2Semiconductor FET device with bottom isolation and high-κ firstIBM·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 4995US10879352B2Vertically stacked nFETs and pFETs with gate-all-around structureIBM·Filed 2019·Granted Dec 29, 2020·9 cites·20 claims
- 5095US10748994B2Vertically stacked nFET and pFET with dual work functionIBM·Filed 2019·Granted Aug 18, 2020·7 cites·17 claims
Showing the top 50 of 726 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Takashi Ando files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →