Inventor · disambiguated record
Takahisa Eimori
Also filed as: EIMORI TAKAHISA
37 granted patents·8 pending applications·960 citations·filing 1988–2012
98Inventor score
Files withMITSUBISHI ELECTRIC CORP36RENESAS TECH CORP5MISE NOBUYUKI2EIMORI TAKAHISA1MITSUBISHI DENKI KABUSHIKI KAS1
Top patents by PatentIndex Score
45 records- 0193US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0291US4994893AField effect transistor substantially coplanar surface structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 19, 1991·62 cites·12 claims
- 0386US5047817AStacked capacitor for semiconductor memory deviceMITSUBISHI DENKI KABUSHIKI KAS·Filed 1989·Granted Sep 10, 1991·42 cites·14 claims
- 0484US5272100AField effect transistor with T-shaped gate electrode and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 21, 1993·61 cites·3 claims
- 0582US5834817AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 10, 1998·42 cites·5 claims
- 0681US8698249B2CMOS semiconductor device and method for manufacturing the sameMISE NOBUYUKI·Filed 2012·Granted Apr 15, 2014·7 cites·5 claims
- 0781US5089863AField effect transistor with T-shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 18, 1992·33 cites·6 claims
- 0880US5637899ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 10, 1997·49 cites·9 claims
- 0980US5442212ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·34 cites·14 claims
- 1080US5177571ALdd mosfet with particularly shaped gate electrode immune to hot electron effectMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 5, 1993·37 cites·4 claims
- 1178US5654573ASemiconductor device having SOI structure and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 5, 1997·53 cites·11 claims
- 1278US5245208ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 14, 1993·66 cites·5 claims
- 1376US5225704AField shield isolation structure for semiconductor memory device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 6, 1993·37 cites·19 claims
- 1475US5691551ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 25, 1997·28 cites·13 claims
- 1574US5164803ACmos semiconductor device with an element isolating field shieldMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·36 cites·4 claims
- 1668US5850090ADynamic semiconductor memory device on SOI substrateMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 15, 1998·26 cites·4 claims
- 1766US7084508B2Semiconductor device with multiple layer insulating filmRENESAS TECH CORP·Filed 2002·Granted Aug 1, 2006·9 cites·4 claims
- 1866US5521419ASemiconductor device having field shield element isolating structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 28, 1996·36 cites·10 claims
- 1965US5094965AField effect transistor having substantially coplanar surface structure and a manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·21 cites·8 claims
- 2064US6740584B2Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 25, 2004·21 cites·4 claims
- 2163US5650342AMethod of making a field effect transistor with a T shaped polysilicon gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 22, 1997·18 cites·3 claims
- 2263US5471080AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 28, 1995·19 cites·2 claims
- 2358US5610418ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 11, 1997·16 cites·7 claims
- 2457US5930614AMethod for forming MOS device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 27, 1999·22 cites·4 claims
- 2556US8288221B2Method of manufacturing semiconductor device and semiconductor deviceEIMORI TAKAHISA·Filed 2009·Granted Oct 16, 2012·1 cites·6 claims
- 2655US5067000ASemiconductor device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 19, 1991·17 cites·13 claims
- 2753US5543646AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·11 cites·2 claims
- 2853US5459344AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 17, 1995·12 cites·5 claims
- 2951US2006255469A1Semiconductor device and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3051US2002127532A1Server and method for providing information created by means of tool by information producer to information requestorMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 3148US2008308869A1Semiconductor device which has mos structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3246US5721444AThin-film transistor having a buried impurity region and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 24, 1998·10 cites·8 claims
- 3346US5097310AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 17, 1992·10 cites·10 claims
- 3445US2010258878A1Cmos semiconductor device and method for manufacturing the sameMISE NOBUYUKI·Filed 2008·Application pending·0 cites
- 3544US2007007602A1Semiconductor device which has MOS structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3643US5181094AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·25 claims
- 3742US6268278B1Semiconductor device and manufacturing process thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 31, 2001·7 cites·4 claims
- 3842US5278437AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 11, 1994·7 cites·3 claims
- 3942US2006086958A1Wire structure, semiconductor device, MRAM, and manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 4041US5180683AMethod of manufacturing stacked capacitor type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·6 claims
- 4140US6573171B2Semiconductor device and manufacturing process thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 3, 2003·0 cites·3 claims
- 4240US2002068443A1Semiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4338US6087710ASemiconductor device having self-aligned contactsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 11, 2000·5 cites·19 claims
- 4437US6495928B1Transfer mark structure for multi-layer interconnecting and method for the manufacture thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 17, 2002·6 cites·2 claims
- 4536US2002024098A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →