Inventor · disambiguated record
Takayuki Enda
Also filed as: ENDA TAKAYUKI
13 granted patents·6 pending applications·139 citations·filing 1994–2024
89Inventor score
Files withSPANSION LLC5ENDA TAKAYUKI3FUJITSU AMD SEMICONDUCTOR LTD3TEXAS INSTRUMENTS INC3FUJITSU LTD2
Top patents by PatentIndex Score
19 records- 0179US5656128AReduction of reflection by amorphous carbonFUJITSU LTD·Filed 1994·Granted Aug 12, 1997·73 cites·26 claims
- 0276US8008778B2Semiconductor deviceSPANSION LLC·Filed 2006·Granted Aug 30, 2011·4 cites·10 claims
- 0375US9570396B2Method of forming a damascene interconnect on a barrier layerENDA TAKAYUKI·Filed 2011·Granted Feb 14, 2017·3 cites·10 claims
- 0471US8344510B2Semiconductor device with void detection monitorSPANSION LLC·Filed 2011·Granted Jan 1, 2013·2 cites·13 claims
- 0569US6794248B2Method of fabricating semiconductor memory device and semiconductor memory device driverFUJITSU AMD SEMICONDUCTOR LTD·Filed 2002·Granted Sep 21, 2004·16 cites·9 claims
- 0669US6007732AReduction of reflection by amorphous carbonFUJITSU LTD·Filed 1997·Granted Dec 28, 1999·40 cites·3 claims
- 0760US2025220998A1Iii-n semiconductor device with substrate contactTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 0860US2025311315A1Semiconductor devices with guard ring structuresTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0958US7902056B2Plasma treated metal silicide layer formationSPANSION LLC·Filed 2008·Granted Mar 8, 2011·1 cites·19 claims
- 1055US7901954B2Method for detecting a voidSPANSION LLC·Filed 2008·Granted Mar 8, 2011·0 cites·7 claims
- 1151US2017154851A1Method of forming a damascene interconnect on a barrier layerMONTEREY RES LLC·Filed 2017·Application pending·0 cites
- 1245US7679194B2Method of fabricating semiconductor memory device and semiconductor memory device driverFUJITSU AMD SEMICONDUCTOR LTD·Filed 2007·Granted Mar 16, 2010·0 cites·7 claims
- 1344US8222147B2Semiconductor device with stop layers and fabrication method using ceria slurryENDA TAKAYUKI·Filed 2006·Granted Jul 17, 2012·0 cites·15 claims
- 1442US9396959B2Semiconductor device with stop layers and fabrication method using ceria slurryENDA TAKAYUKI·Filed 2012·Granted Jul 19, 2016·0 cites·14 claims
- 1542US7453116B2Semiconductor memory device and method of fabricating the sameSPANSION LLC·Filed 2006·Granted Nov 18, 2008·0 cites·2 claims
- 1641US2006214218A1Semiconductor device and method of fabricating the sameSHISHIDO KIYOKAZU·Filed 2005·Application pending·0 cites
- 1737US2005006672A1Method of fabricating semiconductor memory device and semiconductor memory device driverFUJITSU AMD SEMICONDUCTOR LTD·Filed 2004·Application pending·0 cites
- 1837US2018358257A1Ic with trenches filled with essentially crack-free dielectricTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
- 1931US7037780B2Semiconductor memory device and method of fabricating the sameFASL LLC·Filed 2003·Granted May 2, 2006·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →