Method of forming a damascene interconnect on a barrier layer

Abstract

A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.

What is claimed is: 
     
         1 . A method of fabricating a semiconductor device comprising:
 forming a conductive film above a first metal layer formed above a semiconductor substrate, the conductive film serving as a first barrier layer;   forming an opening in the conductive film by etching the conductive film;   forming a second metal layer in the opening; and   forming the first barrier layer by etching the conductive film except a region around the second metal layer.