Inventor · disambiguated record
Tamilmani Ethirajan
Also filed as: ETHIRAJAN TAMILMANI
12 granted patents·1 pending application·34 citations·filing 2014–2021
85Inventor score
Top patents by PatentIndex Score
13 records- 0196US9613955B1Hybrid circuit including a tunnel field-effect transistorIBM·Filed 2015·Granted Apr 4, 2017·23 cites·6 claims
- 0284US9841134B2System managing mobile sensors for continuous monitoring of pipe networksGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·5 cites·18 claims
- 0378US9721059B1Post-layout thermal-aware integrated circuit performance modelingGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·4 cites·17 claims
- 0465US10090209B2Methods of predicting unity gain frequency with direct current and/or low frequency parametersGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·1 cites·7 claims
- 0564US10658390B2Virtual drain for decreased harmonic generation in fully depleted SOI (FDSOI) RF switchesGLOBALFOUNDRIES INC·Filed 2018·Granted May 19, 2020·1 cites·14 claims
- 0652US9748271B2Hybrid circuit including a tunnel field-effect transistorIBM·Filed 2016·Granted Aug 29, 2017·0 cites·14 claims
- 0751US11264470B2Lateral bipolar junction transistor device and method of making such a deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 1, 2022·0 cites·16 claims
- 0851US11158624B1Cascode cellGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 26, 2021·0 cites·20 claims
- 0948US11721621B2Stacked field-effect transistors with a shielded outputGLOBALFOUNDRIES US INC·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1047US9704763B2Methods of predicting unity gain frequency with direct current and/or low frequency parametersGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 11, 2017·0 cites·5 claims
- 1141US11288430B2Producing models for dynamically depleted transistors using systems having simulation circuitsGLOBALFOUNDRIES US INC·Filed 2017·Granted Mar 29, 2022·0 cites·20 claims
- 1240US2020373410A1Contact structures over an active region of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 1333US9996650B2Modeling the performance of a field effect transistor having a dynamically depleted channel regionIBM·Filed 2015·Granted Jun 12, 2018·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →