Inventor · disambiguated record
Tatsuo Fujimoto
Also filed as: FUJIMOTO TATSUO
33 granted patents·9 pending applications·105 citations·filing 1987–2022
95Inventor score
Files withNIPPON STEEL CORP10SHOWA DENKO KK9NAKABAYASHI MASASHI6AIGO TAKASHI5MITSUBISHI ELECTRIC CORP5
Top patents by PatentIndex Score
42 records- 0188US10626520B2Method for producing epitaxial silicon carbide single crystal waferSHOWA DENKO KK·Filed 2016·Granted Apr 21, 2020·6 cites·16 claims
- 0285US9234297B2Silicon carbide single crystal wafer and manufacturing method for sameSATO SHINYA·Filed 2012·Granted Jan 12, 2016·8 cites·20 claims
- 0385US7972704B2Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefromNIPPON STEEL CORP·Filed 2009·Granted Jul 5, 2011·10 cites·11 claims
- 0477US10711369B2Method for producing silicon carbide single crystal and silicon carbide single crystal substrateSHOWA DENKO KK·Filed 2015·Granted Jul 14, 2020·1 cites·4 claims
- 0577US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0677US8673254B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2011·Granted Mar 18, 2014·3 cites·6 claims
- 0776US10435813B2Epitaxial growth method for silicon carbideSHOWA DENKO KK·Filed 2016·Granted Oct 8, 2019·2 cites·7 claims
- 0874US9068277B2Apparatus for manufacturing single-crystal silicon carbideNAKABAYASHI MASASHI·Filed 2009·Granted Jun 30, 2015·2 cites·8 claims
- 0973US5049203AMethod of making rare earth magnetsNIPPON STEEL CORP·Filed 1990·Granted Sep 17, 1991·26 cites·5 claims
- 1069US10119200B2Silicon carbide single crystal substrate and process for producing sameSHOWA DENKO KK·Filed 2013·Granted Nov 6, 2018·0 cites·4 claims
- 1169US2019024257A1Silicon carbide single crystal substrate and process for producing sameSHOWA DENKO KK·Filed 2018·Application pending·0 cites
- 1267US2010089311A1Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2009·Application pending·0 cites
- 1367US2010083897A1Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2009·Application pending·0 cites
- 1466US11667298B2Driver posture measurement device and vehicle control deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Jun 6, 2023·0 cites·15 claims
- 1566US9777403B2Single-crystal silicon carbide and single-crystal silicon carbide waferNAKABAYASHI MASASHI·Filed 2009·Granted Oct 3, 2017·2 cites·11 claims
- 1665US9915011B2Low resistivity single crystal silicon carbide waferFUJIMOTO TATSUO·Filed 2009·Granted Mar 13, 2018·1 cites·14 claims
- 1764US11114295B2Epitaxial silicon carbide single crystal wafer and process for producing the sameSHOWA DENKO KK·Filed 2020·Granted Sep 7, 2021·0 cites·2 claims
- 1864US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 1962US8795624B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2005·Granted Aug 5, 2014·1 cites·9 claims
- 2062US8491719B2Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of sameNAKABAYASHI MASASHI·Filed 2009·Granted Jul 23, 2013·0 cites·8 claims
- 2161US8936680B2Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and methodKATSUNO MASAKAZU·Filed 2010·Granted Jan 20, 2015·2 cites·6 claims
- 2261US2008020212A1Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2007·Application pending·0 cites
- 2359US4839790AGas accident preventive unitTOKYO GAS CO LTD·Filed 1987·Granted Jun 13, 1989·22 cites·1 claims
- 2455US12134382B2Driving support deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Nov 5, 2024·0 cites·16 claims
- 2555US7794842B2Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of sameNIPPON STEEL CORP·Filed 2004·Granted Sep 14, 2010·2 cites·20 claims
- 2654US10066316B2Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingotSHOWA DENKO KK·Filed 2016·Granted Sep 4, 2018·0 cites·3 claims
- 2753US7799305B2Silicon carbide single crystal and single crystal waferNIPPON STEEL CORP·Filed 2005·Granted Sep 21, 2010·0 cites·11 claims
- 2853US2015075422A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 2952US8044408B2SiC single-crystal substrate and method of producing SiC single-crystal substrateNIPPON STEEL CORP·Filed 2009·Granted Oct 25, 2011·0 cites·9 claims
- 3051US10727047B2Epitaxial silicon carbide single crystal wafer and process for producing the sameSHOWA DENKO KK·Filed 2016·Granted Jul 28, 2020·0 cites·2 claims
- 3150US12233868B2Driving-assistance control apparatusMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Feb 25, 2025·0 cites·16 claims
- 3249US11454184B2Control device for an internal combustion engineMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Sep 27, 2022·0 cites·8 claims
- 3349US8178389B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2010·Granted May 15, 2012·0 cites·13 claims
- 3445US8927396B2Production process of epitaxial silicon carbide single crystal substrateAIGO TAKASHI·Filed 2011·Granted Jan 6, 2015·0 cites·7 claims
- 3545US2005160965A1Seed crystal of silicon carbide single crystal and method for producing ingot using sameNIPPON STEEL CORP·Filed 2003·Application pending·0 cites
- 3644US2015361585A1Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic waferNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 3743US5201963ARare earth magnets and method of producing sameNIPPON STEEL CORP·Filed 1991·Granted Apr 13, 1993·10 cites·4 claims
- 3842US10989627B2Controller which determines a misfire for an internal combustion engineMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Apr 27, 2021·0 cites·8 claims
- 3942US9957639B2Method for producing epitaxial silicon carbide waferNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Granted May 1, 2018·0 cites·18 claims
- 4042US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
- 4139US10450672B2Method for producing epitaxial silicon carbide wafersSHOWA DENKO KK·Filed 2015·Granted Oct 22, 2019·0 cites·17 claims
- 4237US2013320357A1Epitaxial silicon carbide single crystal substrate and method for producing sameAIGO TAKASHI·Filed 2012·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tatsuo Fujimoto files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →