Inventor · disambiguated record
Tatsuya Fukumura
Also filed as: FUKUMURA TATSUYA
14 granted patents·9 pending applications·83 citations·filing 2003–2016
91Inventor score
Files withRENESAS TECH CORP6RENESAS ELECTRONICS CORP5TOSHIBA KK4FUKUMURA TATSUYA2MATSUOKA MASAMICHI2
Top patents by PatentIndex Score
23 records- 0185US7462905B2Nonvolatile semiconductor memory device, semiconductor device and method of manufacturing nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Dec 9, 2008·13 cites·9 claims
- 0284US7015090B2Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenchesRENESAS TECH CORP·Filed 2003·Granted Mar 21, 2006·30 cites·38 claims
- 0383US7312123B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Dec 25, 2007·6 cites·21 claims
- 0480US7064380B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted Jun 20, 2006·15 cites·27 claims
- 0579US8466507B2Semiconductor device and a method of manufacturing the sameFUKUMURA TATSUYA·Filed 2011·Granted Jun 18, 2013·3 cites·6 claims
- 0677US9666239B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted May 30, 2017·3 cites·20 claims
- 0775US8212305B2Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitanceFUKUMURA TATSUYA·Filed 2009·Granted Jul 3, 2012·3 cites·7 claims
- 0871US9391178B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Jul 12, 2016·3 cites·3 claims
- 0971US8546151B2Method for manufacturing magnetic storage device and magnetic storage deviceFURUTA HARUO·Filed 2008·Granted Oct 1, 2013·5 cites·2 claims
- 1060US9412747B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 9, 2016·0 cites·6 claims
- 1157US8907399B2Semiconductor device with flash memory cells having improved arrangement for floating gate electrodes and control gate electrodes of the flash memory cellsRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 9, 2014·0 cites·1 claims
- 1256US7662686B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Feb 16, 2010·0 cites·17 claims
- 1351US7906346B2Method for manufacturing a magnetic memory device and magnetic memory deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Mar 15, 2011·2 cites·5 claims
- 1450US2009075471A1Method of manufacturing semiconductor memory deviceRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 1542US2016064399A1Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2014·Application pending·0 cites
- 1641US2013203187A1Semiconductor device and method for manufacturing a semiconductor deviceMATSUOKA MASAMICHI·Filed 2013·Application pending·0 cites
- 1738US10147738B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Dec 4, 2018·0 cites·16 claims
- 1838US2015129947A1Nonvolatile semiconductor storage deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 1938US2011121419A1Method for manufacturing a magnetic memory device and magnetic memory deviceRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2038US2006033141A1Method of manufacturing a semiconductor device having trenches for isolation and capacitorOKAZAKI TSUTOMU·Filed 2005·Application pending·0 cites
- 2137US2011198715A1Semiconductor device and method for manufacturing a semiconductor deviceRENESAS ELECTRONIC CORP·Filed 2011·Application pending·0 cites
- 2232US2015372079A1Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2332US2012068282A1Semiconductor device and manufacturing method of the sameMATSUOKA MASAMICHI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →