Method for manufacturing a magnetic memory device and magnetic memory device

Abstract

A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.

1 - 5 . (canceled) 
     
     
         6 . A magnetic memory device including a TMR element, comprising:
 a lower wiring layer;   an interlayer insulating layer provided over the lower wiring layer and having an opening provided in the interlayer insulating layer so that the lower wiring layer is exposed;   a wiring layer comprising a barrier metal layer covering the interlayer insulating layer and an inner surface of the opening and a first metal layer embedded in the opening;   a second metal layer covering the wiring layer;   a TMR element which is provided on the second metal layer and includes a lower magnetic film, a tunnel insulating film and an upper magnetic film; and   an insulating layer covering a side surface of the TMR element and an upper surface of the second metal layer, and including a silicon and a nitrogen.   
     
     
         7 . The magnetic memory device according to  claim 6 , wherein the surface of the barrier metal layer and the surface of the metal layer are in approximately the same plane. 
     
     
         8 . The magnetic memory device according to  claim 6 , wherein the metal layer has a recess structure where the surface of the first metal layer is dented in the vicinity of the center and the distance in the direction of the normal line between the surface of the barrier metal and the bottom of the recess structure is 10% or less of the film thickness of the tunnel insulating film included in the TMR element. 
     
     
         9 . The magnetic memory device according to  claim 6 , wherein the TMR element is provided right above the first metal layer.