Inventor · disambiguated record
Tatsufumi Hamada
Also filed as: HAMADA TATSUFUMI
17 granted patents·10 pending applications·13 citations·filing 2013–2024
87Inventor score
Top patents by PatentIndex Score
27 records- 0181US10276590B2Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layerTOSHIBA MEMORY CORP·Filed 2018·Granted Apr 30, 2019·3 cites·8 claims
- 0280US9991272B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Jun 5, 2018·3 cites·11 claims
- 0379US9842856B2Semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Dec 12, 2017·3 cites·8 claims
- 0476US11282853B2Semiconductor memory deviceKIOXIA CORP·Filed 2019·Granted Mar 22, 2022·3 cites·18 claims
- 0567US12464722B2Three-dimensional type NAND memory deviceKIOXIA CORP·Filed 2022·Granted Nov 4, 2025·0 cites·10 claims
- 0665US9245847B2Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formedTOKYO ELECTRON LTD·Filed 2014·Granted Jan 26, 2016·1 cites·44 claims
- 0757US2024298445A1Semiconductor memory device and manufacturing method thereofKIOXIA CORP·Filed 2024·Application pending·0 cites
- 0856US11587942B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Feb 21, 2023·0 cites·4 claims
- 0956US2024090222A1Semiconductor memory device and manufacturing method thereforKIOXIA CORP·Filed 2023·Application pending·0 cites
- 1054US2015110975A1Method for forming manganese-containing filmTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 1152US12004349B2Semiconductor device and method for manufacturing the sameKIOXIA CORP·Filed 2021·Granted Jun 4, 2024·0 cites·17 claims
- 1251US11950414B2Memory deviceKIOXIA CORP·Filed 2020·Granted Apr 2, 2024·0 cites·19 claims
- 1351US9240379B2Semiconductor device manufacturing method for suppresing wiring material from being diffused into insulating film, storage medium and semiconductor deviceTOKYO ELECTRON LTD·Filed 2014·Granted Jan 19, 2016·0 cites·1 claims
- 1450US11791279B2Semiconductor device with hybrid channelKIOXIA CORP·Filed 2020·Granted Oct 17, 2023·0 cites·9 claims
- 1549US12041778B2Semiconductor storage device and method for manufacturing semiconductor storage deviceKIOXIA CORP·Filed 2021·Granted Jul 16, 2024·0 cites·15 claims
- 1648US11158649B2Semiconductor storage device with columnar body having impurity containing channel filmTOSHIBA MEMORY CORP·Filed 2019·Granted Oct 26, 2021·0 cites·10 claims
- 1748US9917099B2Semiconductor device having vertical channel between stacked electrode layers and insulating layersTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 13, 2018·0 cites·12 claims
- 1848US2016326646A1Method for forming manganese-containing filmTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 1946US12274059B2Semiconductor storage device and method of manufacturing semiconductor storage deviceKIOXIA CORP·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 2046US2023309303A1Semiconductor memory device and method for manufacturing semiconductor memory deviceKIOXIA CORP·Filed 2022·Application pending·0 cites
- 2145US2014374904A1Semiconductor device, semiconductor device manufacturing method, and semiconductor manufacturing apparatusTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2244US11854971B2Semiconductor storage device and manufacturing method thereofKIOXIA CORP·Filed 2021·Granted Dec 26, 2023·0 cites·7 claims
- 2343US2014103529A1Semiconductor device manufacturing method, semiconductor device, semiconductor device manufacturing apparatus and storage mediumTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 2442US11296111B2Semiconductor memory device and manufacturing method of semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Apr 5, 2022·0 cites·14 claims
- 2542US2014084466A1Manganese silicate film forming method, processing system, semiconductor device manufacturing method and semiconductor deviceTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 2637US2019363101A1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Application pending·0 cites
- 2733US2015126027A1Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
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