Inventor · disambiguated record
Takeshi Hamamoto
Also filed as: HAMAMOTO TAKESHI
107 granted patents·12 pending applications·3,252 citations·filing 1989–2024
99Inventor score
Files withMITSUBISHI ELECTRIC CORP43TOSHIBA KK36RENESAS TECH CORP17NEC ELECTRONICS CORP4ZENTEL JAPAN CORP4
Top patents by PatentIndex Score
119 records- 0199US7609551B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Oct 27, 2009·255 cites·20 claims
- 0298US6417715B2Clock generation circuit generating internal clock of small variation in phase difference from external clock, and semiconductor memory device including such clock generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 9, 2002·99 cites·17 claims
- 0398US5698869AInsulated-gate transistor having narrow-bandgap-sourceTOSHIBA KK·Filed 1995·Granted Dec 16, 1997·415 cites·31 claims
- 0495US5319589ADynamic content addressable memory device and a method of operating thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 7, 1994·143 cites·21 claims
- 0594US7977738B2Semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted Jul 12, 2011·31 cites·9 claims
- 0693US6337824B1Dynamic semiconductor memory device with reduced current consumption in sensing operationMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 8, 2002·106 cites·19 claims
- 0793US6087691ASemiconductor device having lower minority carrier noiseMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 11, 2000·118 cites·4 claims
- 0892US10581841B2Authenticated networkZENTEL JAPAN CORP·Filed 2017·Granted Mar 3, 2020·10 cites·16 claims
- 0991US6489819B1Clock synchronous semiconductor memory device allowing testing by low speed testerMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 3, 2002·92 cites·16 claims
- 1090US6850454B2Semiconductor memory device with reduced current consumption during standby stateRENESAS TECH CORP·Filed 2003·Granted Feb 1, 2005·52 cites·11 claims
- 1190US6781443B2Potential generating circuit capable of correctly controlling output potentialRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·38 cites·11 claims
- 1290US6166989AClock synchronous type semiconductor memory device that can switch word configurationMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 26, 2000·71 cites·29 claims
- 1390US5477071AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1995·Granted Dec 19, 1995·58 cites·17 claims
- 1489US5764562ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 9, 1998·79 cites·27 claims
- 1588US7323748B2Semiconductor device having epitaxial layerTOSHIBA KK·Filed 2006·Granted Jan 29, 2008·13 cites·3 claims
- 1688US6377512B1Clock synchronous type semiconductor memory device that can switch word configurationMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 23, 2002·42 cites·14 claims
- 1788US6326658B1Semiconductor device including an interface layer containing chlorineTOSHIBA KK·Filed 1999·Granted Dec 4, 2001·52 cites·2 claims
- 1888US5895946AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1998·Granted Apr 20, 1999·48 cites·3 claims
- 1988US4965767AAssociative memory having simplified memory cell circuitryMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 23, 1990·55 cites·9 claims
- 2087US6333895B1Clock synchronous semiconductor device having a reduced clock access timeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 25, 2001·48 cites·37 claims
- 2187US5508541ARandom access memory device with trench-type one-transistor memory cell structureTOSHIBA KK·Filed 1993·Granted Apr 16, 1996·61 cites·24 claims
- 2286US7095081B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Aug 22, 2006·11 cites·3 claims
- 2386US6757212B2Clock synchronous type semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Jun 29, 2004·41 cites·19 claims
- 2485US5838038ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1995·Granted Nov 17, 1998·60 cites·14 claims
- 2585US5731609AMOS random access memory having array of trench type one-capacitor/one-transistor memory cellsTOSHIBA KK·Filed 1997·Granted Mar 24, 1998·41 cites·6 claims
- 2685US5235199ASemiconductor memory with pad electrode and bit line under stacked capacitorTOSHIBA KK·Filed 1992·Granted Aug 10, 1993·48 cites·7 claims
- 2784US7049661B2Semiconductor device having epitaxial layerTOSHIBA KK·Filed 2003·Granted May 23, 2006·28 cites·3 claims
- 2883US7692963B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Apr 6, 2010·10 cites·20 claims
- 2982US6301169B1Semiconductor memory device with IO compression test modeMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·31 cites·10 claims
- 3081US7537989B2Method for manufacturing SOI substrateSUMCO CORP·Filed 2006·Granted May 26, 2009·9 cites·1 claims
- 3181US5936459AInternal potential generating circuit and boosted potential generating unit using pumping operationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 10, 1999·63 cites·22 claims
- 3280US10706177B2Apparatus and method for chip identification and preventing malicious manipulation of physical addresses by incorporating a physical network with a logical networkZENTEL JAPAN CORP·Filed 2017·Granted Jul 7, 2020·3 cites·35 claims
- 3380US6449198B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 10, 2002·30 cites·6 claims
- 3480US5146300ASemiconductor integrated circuit device having improved stacked capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 8, 1992·47 cites·11 claims
- 3578US5736760ARandom access memory device with trench-type one-transistor memory cell structureTOSHIBA KK·Filed 1996·Granted Apr 7, 1998·37 cites·9 claims
- 3678US5387532ASemiconductor memory having capacitor electrode formed above bit lineTOSHIBA KK·Filed 1993·Granted Feb 7, 1995·35 cites·10 claims
- 3777US7719056B2Semiconductor memory device having a floating body and a plate electrodeTOSHIBA KK·Filed 2007·Granted May 18, 2010·7 cites·7 claims
- 3877US6505325B1Pattern data density inspection apparatus and density inspection method and recording medium storing pattern data density inspection programNEC CORP·Filed 2000·Granted Jan 7, 2003·19 cites·19 claims
- 3977US5388066AContent addressable memory device and a method of disabling a coincidence word thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 7, 1995·36 cites·13 claims
- 4076US6438067B2Clock generating circuit ensuring a wide lock-allowing frequency range and allowing reduction in layout area as well as a semiconductor device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 20, 2002·23 cites·17 claims
- 4176US5561311ASemiconductor memory with insulation film embedded in groove formed on substrateTOSHIBA KK·Filed 1994·Granted Oct 1, 1996·31 cites·9 claims
- 4275US7058923B2Optical proximity effect correcting method and mask data forming method in semiconductor manufacturing process, which can sufficiently correct optical proximity effect, even under various situations with regard to size and shape of design pattern, and space width and position relation between design patternsNEC ELECTRONICS CORP·Filed 2001·Granted Jun 6, 2006·15 cites·3 claims
- 4375US6937088B2Potential generating circuit capable of correctly controlling output potentialRENESAS TECH CORP·Filed 2004·Granted Aug 30, 2005·19 cites·6 claims
- 4475US6570174B1Optical proximity effect correcting method in semiconductor manufacturing process, which can sufficiently correct optical proximity effect, even under various situations with regard to size and shape of design pattern, and space width and position relation between design patternsNEC ELECTRONICS CORP·Filed 1999·Granted May 27, 2003·40 cites·5 claims
- 4575US6243320B1Synchronous semiconductor memory device capable of selecting column at high speedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 5, 2001·32 cites·11 claims
- 4675US2024324663A1Non-combustion-heating-type stickJAPAN TOBACCO INC·Filed 2024·Application pending·0 cites
- 4774US7110282B2Semiconductor memory device allowing accurate burn-in testRENESAS TECH CORP·Filed 2004·Granted Sep 19, 2006·21 cites·6 claims
- 4874US6782498B2Semiconductor memory device allowing mounting of built-in self test circuit without addition of interface specificationRENESAS TECH CORP·Filed 2001·Granted Aug 24, 2004·22 cites·16 claims
- 4974US5130945AContent addressable memory combining match comparisons of a plurality of cellsMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 14, 1992·35 cites·13 claims
- 5073US9406720B2Semiconductor storage deviceTOSHIBA KK·Filed 2015·Granted Aug 2, 2016·2 cites·20 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →