Semiconductor device having epitaxial layer

Abstract

A semiconductor device includes a substrate having first and second regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, and a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer, having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and having a tapered surface faced to a side surface of the first epitaxial layer.

1. A semiconductor device comprising:
 a substrate having first and second regions, 
 a first insulating film formed on the substrate in the first region, 
 a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, and 
 a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer, having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and having a tapered surface faced to a side surface of the first epitaxial layer. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the side surface of first epitaxial layer has a facet. 
     
     
       3. The semiconductor device according to  claim 1 , further comprising:
 a first gate insulating film formed on the upper surface and the tapered surface of the first semiconductor layer; and 
 a second gate insulating film formed on the upper surface and the side surface of the first epitaxial layer.