Inventor

NAGANO HAJIME

JP50 patents

⚠️ This page may combine multiple inventors who share the name “NAGANO HAJIME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAGANO HAJIME

TOSHIBA KK

Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof

Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions

Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer

Semiconductor memory device having multiple air gaps in interelectrode insulating film

Semiconductor device having epitaxial layer

Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions

Semiconductor device having epitaxial layer

Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same

Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device using partial SOI substrate and manufacturing method thereof

Semiconductor memory device having voids between word lines and a source line

Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor device having a hollow region and method of manufacturing the same

Semiconductor substrate, manufacturing method therefor, and semiconductor device

Element formation substrate for forming semiconductor device

Method for manufacturing partial SOI substrates

Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate

Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same

Semiconductor device and method for manufacturing partial SOI substrates

Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer

Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer

Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same

Nonvolatile semiconductor memory device and method of fabricating the same

Method of manufacturing non-volatile semiconductor memory

Element formation substrate, method of manufacturing the same, and semiconductor device

Semiconductor device using partial SOI substrate and manufacturing method thereof

Semiconductor device using partial SOI substrate and manufacturing method thereof

Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof

Nonvolatile semiconductor memory device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Semiconductor manufacturing apparatus and semiconductor manufacturing method

TOSHIBA MEMORY CORP

Semiconductor device

Semiconductor device and method for manufacturing semiconductor device

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Vaporization system

MITSUBISHI HEAVY IND LTD

Wet gas purification method and system for practicing the same

Mercury removal method and system

Apparatus for treating COS for gas produced by gasification and method for treating COS

KYOCERA CORP

Wireless communication terminal

Wireless communication terminal, transmission control method, and computer program

KABUSHIKIA KAISHA TOSHIBA

Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them

NAGANO HAJIME

Base station and mobile terminal

RYOEN TECHNICAL SERVICE CORP

Gas combustion treatment method and apparatus therefor

YAZAKI CORP

Wire harness manufacturing system and wire harness manufacturing method