Inventor · disambiguated record
Tatsuya Hinoue
Also filed as: HINOUE TATSUYA
43 granted patents·13 pending applications·147 citations·filing 2002–2024
97Inventor score
Files withSANDISK TECHNOLOGIES LLC32HITACHI GLOBAL STORAGE TECH11HGST Netherlands BV4HINOUE TATSUYA2RENESAS TECH CORP2
Top patents by PatentIndex Score
56 records- 0196US11398497B2Three-dimensional memory device containing auxiliary support pillar structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·5 cites·20 claims
- 0296US11342347B2Spacerless source contact layer replacement process and three-dimensional memory device formed by the processSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 24, 2022·4 cites·23 claims
- 0395US11049807B2Three-dimensional memory device containing tubular blocking dielectric spacersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 29, 2021·16 cites·11 claims
- 0495US10615123B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 7, 2020·11 cites·10 claims
- 0594US11532570B2Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 0694US10229931B1Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 12, 2019·19 cites·18 claims
- 0793US11877452B2Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 16, 2024·2 cites·19 claims
- 0893US11018152B2Method for etching bottom punch-through opening in a memory film of a multi-tier three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 25, 2021·13 cites·19 claims
- 0993US10950627B1Three-dimensional memory device including split memory cells and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 16, 2021·12 cites·20 claims
- 1093US10861869B2Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·9 cites·9 claims
- 1191US12408345B2Three-dimensional memory device with backside support pillar structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Sep 2, 2025·1 cites·20 claims
- 1290US11844222B2Three-dimensional memory device with backside support pillar structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 12, 2023·2 cites·3 claims
- 1390US11515326B2Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 29, 2022·2 cites·12 claims
- 1487US11444101B2Spacerless source contact layer replacement process and three-dimensional memory device formed by the processSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 13, 2022·2 cites·21 claims
- 1586US11217532B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 4, 2022·4 cites·18 claims
- 1686US7532436B2Magnetic recording medium and magnetic memory device for high density recordingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 12, 2009·7 cites·16 claims
- 1785US11968827B2Three-dimensional memory device with replacement select gate electrodes and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 23, 2024·1 cites·5 claims
- 1879US8257845B2Magnetic recording medium utilizing a recording layer having more and less concentrated parts of a nonmagnetic element in an in-plane direction and a nonmagnetic layerHINOUE TATSUYA·Filed 2009·Granted Sep 4, 2012·5 cites·19 claims
- 1979US7704613B2Magnetic recording medium for high density recordingHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Apr 27, 2010·4 cites·9 claims
- 2065US7163756B2Magnetic recording mediumHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Jan 16, 2007·5 cites·13 claims
- 2165US6734114B2Method for manufacturing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2002·Granted May 11, 2004·10 cites·14 claims
- 2264US8599509B2Magnetic recording medium having non-magnetic separating regions and methods of manufacturing the sameONO TOSHINORI·Filed 2010·Granted Dec 3, 2013·2 cites·25 claims
- 2363US8383253B2Magnetic recording medium utilizing a recording layer having more and less concentrated parts of a nonmagnetic element in an in-plane direction and manufacturing method thereofHGST Netherlands BV·Filed 2009·Granted Feb 26, 2013·2 cites·15 claims
- 2462US2025234544A1Three-dimensional memory device including a schottky source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2561US12382638B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 5, 2025·0 cites·20 claims
- 2661US7876530B2Magnetic recording medium having a cobalt-based alloy film for high density recording and magnetic storage device using sameHITACHI GLOBAL STORAGE TECH NL·Filed 2009·Granted Jan 25, 2011·2 cites·19 claims
- 2760US12414296B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 9, 2025·0 cites·10 claims
- 2860US2024260266A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2959US12457744B2Three-dimensional memory device and method of making thereof using selective metal nitride deposition on dielectric metal oxide blocking dielectricSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 28, 2025·0 cites·4 claims
- 3059US12029037B2Three-dimensional memory device with discrete charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 2, 2024·0 cites·12 claims
- 3158US12456688B2High aspect ratio via fill process employing selective metal deposition and structures formed by the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 3258US12394668B2Semiconductor device having edge seal and method of making thereof without metal hard mask arcingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Aug 19, 2025·0 cites·12 claims
- 3358US2024213147A1Three-dimensional memory device with self-aligned memory block isolation and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 3457US2025048641A1Memory device including hafnium or zirconium oxide containing blocking dielectric and tungsten nitride barrier and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3555US12101936B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 24, 2024·0 cites·20 claims
- 3655US7267894B2Magnetic recording medium and magnetic recording apparatusHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Sep 11, 2007·2 cites·10 claims
- 3754US11942429B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 26, 2024·0 cites·14 claims
- 3854US2025234543A1Three-dimensional memory device including a schottky source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3953US12416589B2Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imagingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 16, 2025·0 cites·2 claims
- 4053US12185540B2Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacementSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 31, 2024·0 cites·2 claims
- 4153US7545604B2Magnetic recording medium having a cobalt-based alloy film for high density recording and magnetic storage device using sameHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jun 9, 2009·0 cites·17 claims
- 4252US7517597B2Magnetic recording mediumHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Apr 14, 2009·1 cites·16 claims
- 4352US7273667B2Longitudinal multi-layer magnetic recording mediumHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Sep 25, 2007·1 cites·15 claims
- 4451US12046285B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 23, 2024·0 cites·3 claims
- 4550US2022406794A1Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Application pending·0 cites
- 4649US9406327B2Granular media with a high-Hk assist layer for microwave-assisted magnetic recordingHGST Netherlands BV·Filed 2013·Granted Aug 2, 2016·0 cites·19 claims
- 4747US2006228588A1Magnetic recording mediumHITACHI GLOBAL STORAGE TECH·Filed 2006·Application pending·0 cites
- 4847US2006269793A1Magnetic recording medium for longitudinal recordingHITACHI GLOBAL STORAGE TECH·Filed 2006·Application pending·0 cites
- 4946US7645528B2Magnetic recording media with ultra-high recording densityHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jan 12, 2010·0 cites·4 claims
- 5046US2016125903A1Perpendicular magnetic recording medium having an oxide seed layer and ru alloy intermediate layerHGST Netherlands BV·Filed 2014·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →