Inventor · disambiguated record
Taizo Hoshino
Also filed as: HOSHINO TAIZO
4 granted patents·2 pending applications·77 citations·filing 1999–2014
72Inventor score
Technology areasH10P
Top patents by PatentIndex Score
6 records- 0179US6548886B1Silicon semiconductor wafer and method for producing the sameWACKER NSCE CORP·Filed 1999·Granted Apr 15, 2003·70 cites·26 claims
- 0277US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0364US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 0453US2015075422A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 0552US8044408B2SiC single-crystal substrate and method of producing SiC single-crystal substrateNIPPON STEEL CORP·Filed 2009·Granted Oct 25, 2011·0 cites·9 claims
- 0642US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →