Inventor · disambiguated record
Tatsuya Iwasaki
Also filed as: IWASAKI TATSUYA
129 granted patents·28 pending applications·14,141 citations·filing 1993–2023
99Inventor score
Top patents by PatentIndex Score
157 records- 0199US8003981B2Field effect transistor using oxide film for channel and method of manufacturing the sameCANON KK·Filed 2007·Granted Aug 23, 2011·187 cites·10 claims
- 0299US7956361B2Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide filmCANON KK·Filed 2010·Granted Jun 7, 2011·306 cites·2 claims
- 0399US7935582B2Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide filmCANON KK·Filed 2010·Granted May 3, 2011·328 cites·4 claims
- 0499US7872259B2Light-emitting deviceCANON KK·Filed 2005·Granted Jan 18, 2011·156 cites·26 claims
- 0599US7791074B2Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide filmCANON KK·Filed 2006·Granted Sep 7, 2010·601 cites·4 claims
- 0699US7453087B2Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layerCANON KK·Filed 2006·Granted Nov 18, 2008·4k cites·15 claims
- 0799US6476409B2Nano-structures, process for preparing nano-structures and devicesCANON KK·Filed 2000·Granted Nov 5, 2002·118 cites·26 claims
- 0899US6278231B1Nanostructure, electron emitting device, carbon nanotube device, and method of producing the sameCANON KK·Filed 1999·Granted Aug 21, 2001·216 cites·24 claims
- 0998US8274078B2Metal oxynitride semiconductor containing zincITAGAKI NAHO·Filed 2008·Granted Sep 25, 2012·352 cites·5 claims
- 1098US8154024B2Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide filmIWASAKI TATSUYA·Filed 2011·Granted Apr 10, 2012·269 cites·5 claims
- 1198US7829444B2Field effect transistor manufacturing methodCANON KK·Filed 2005·Granted Nov 9, 2010·140 cites·3 claims
- 1298US7791082B2Semiconductor apparatus and method of manufacturing the sameCANON KK·Filed 2007·Granted Sep 7, 2010·114 cites·5 claims
- 1398US7696513B2Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the sameCANON KK·Filed 2007·Granted Apr 13, 2010·52 cites·8 claims
- 1498US7411209B2Field-effect transistor and method for manufacturing the sameCANON KK·Filed 2007·Granted Aug 12, 2008·4.2k cites·14 claims
- 1598US6628053B1Carbon nanotube device, manufacturing method of carbon nanotube device, and electron emitting deviceCANON KK·Filed 1998·Granted Sep 30, 2003·265 cites·78 claims
- 1697US8716711B2Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layerIWASAKI TATSUYA·Filed 2011·Granted May 6, 2014·31 cites·13 claims
- 1797US8212248B2Amorphous oxide and field effect transistorITAGAKI NAHO·Filed 2008·Granted Jul 3, 2012·117 cites·21 claims
- 1897US8164090B2Field effect transistor and process for production thereofIWASAKI TATSUYA·Filed 2009·Granted Apr 24, 2012·115 cites·6 claims
- 1997US7906780B2Field effect transistorCANON KK·Filed 2007·Granted Mar 15, 2011·59 cites·7 claims
- 2097US6171162B1Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereofCANON KK·Filed 1999·Granted Jan 9, 2001·117 cites·50 claims
- 2197US6147449AElectron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereofCANON KK·Filed 1995·Granted Nov 14, 2000·134 cites·35 claims
- 2296US8084307B2Method for manufacturing thin film transistorITAGAKI NAHO·Filed 2007·Granted Dec 27, 2011·54 cites·4 claims
- 2396US7847362B2Photo detector, image sensor, photo-detection method, and imaging methodCANON KK·Filed 2008·Granted Dec 7, 2010·36 cites·5 claims
- 2496US6838297B2Nanostructure, electron emitting device, carbon nanotube device, and method of producing the sameCANON KK·Filed 2001·Granted Jan 4, 2005·107 cites·25 claims
- 2595US8742412B2Thin film transistor using an oxide semiconductor and displayGOYAL AMITA·Filed 2009·Granted Jun 3, 2014·89 cites·14 claims
- 2695US7964871B2Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layerCANON KK·Filed 2008·Granted Jun 21, 2011·30 cites·1 claims
- 2795US7737438B2Field-effect transistor and method for manufacturing the sameCANON KK·Filed 2008·Granted Jun 15, 2010·29 cites·14 claims
- 2895US6936854B2Optoelectronic substrateCANON KK·Filed 2002·Granted Aug 30, 2005·71 cites·16 claims
- 2995US6525461B1Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting deviceCANON KK·Filed 1998·Granted Feb 25, 2003·87 cites·23 claims
- 3094US8212252B2Light-emitting deviceDEN TOHRU·Filed 2010·Granted Jul 3, 2012·24 cites·54 claims
- 3194US8188467B2Amorphous oxide and field effect transistorITAGAKI NAHO·Filed 2008·Granted May 29, 2012·37 cites·8 claims
- 3294US7148619B2Electronic device containing a carbon nanotubeCANON KK·Filed 2005·Granted Dec 12, 2006·36 cites·15 claims
- 3394US7129466B2Color image pickup device and color light-receiving deviceCANON KK·Filed 2003·Granted Oct 31, 2006·107 cites·7 claims
- 3494US6784007B2Nano-structures, process for preparing nano-structures and devicesCANON KK·Filed 2002·Granted Aug 31, 2004·34 cites·14 claims
- 3594US6720728B2Devices containing a carbon nanotubeCANON KK·Filed 2003·Granted Apr 13, 2004·78 cites·27 claims
- 3694US6610463B1Method of manufacturing structure having poresCANON KK·Filed 2000·Granted Aug 26, 2003·92 cites·34 claims
- 3794US5718763AResist processing apparatus for a rectangular substrateTOKYO ELECTRON LTD·Filed 1995·Granted Feb 17, 1998·154 cites·7 claims
- 3894US5591061AApparatus for manufacturing electron source and image forming apparatusCANON KK·Filed 1995·Granted Jan 7, 1997·94 cites·45 claims
- 3993US9416022B2Method for preparing bismuth iodide article and method for manufacturing radiation detecting elementCANON KK·Filed 2014·Granted Aug 16, 2016·6 cites·8 claims
- 4093US6541386B2Method for producing a structure with narrow poresCANON KK·Filed 2001·Granted Apr 1, 2003·32 cites·41 claims
- 4193US6464853B1Method of producing structure having narrow pores by anodizingCANON KK·Filed 1999·Granted Oct 15, 2002·65 cites·50 claims
- 4292US10128696B2Wireless power receiving apparatusROHM CO LTD·Filed 2016·Granted Nov 13, 2018·10 cites·19 claims
- 4391US8188471B2Field effect transistorIWASAKI TATSUYA·Filed 2008·Granted May 29, 2012·20 cites·10 claims
- 4490US6214738B1Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the methodCANON KK·Filed 1999·Granted Apr 10, 2001·55 cites·16 claims
- 4589US8314425B2Field-effect transistor using amorphouse oxideIWASAKI TATSUYA·Filed 2009·Granted Nov 20, 2012·19 cites·10 claims
- 4689US6979244B2Method of manufacturing an electronic device containing a carbon nanotubeCANON KK·Filed 2003·Granted Dec 27, 2005·33 cites·9 claims
- 4789US5593335AMethod of manufacturing an electron sourceCANON KK·Filed 1994·Granted Jan 14, 1997·58 cites·37 claims
- 4888US10199866B2Control circuit for wireless power receiver and control methodROHM CO LTD·Filed 2016·Granted Feb 5, 2019·6 cites·14 claims
- 4988US7319069B2Structure having pores, device using the same, and manufacturing methods thereforCANON KK·Filed 2006·Granted Jan 15, 2008·31 cites·18 claims
- 5087US6855025B2Structure and a process for its productionCANON KK·Filed 2002·Granted Feb 15, 2005·20 cites·19 claims
Showing the top 50 of 157 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →