Inventor · disambiguated record
Takeshi Kajiyama
Also filed as: KAJIYAMA TAKESHI
68 granted patents·12 pending applications·968 citations·filing 1997–2015
99Inventor score
Top patents by PatentIndex Score
80 records- 0198US8357982B2Magnetic memoryTOSHIBA KK·Filed 2010·Granted Jan 22, 2013·50 cites·20 claims
- 0297US6632723B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Oct 14, 2003·191 cites·29 claims
- 0395US8314464B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 20, 2012·28 cites·7 claims
- 0495US8309950B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 13, 2012·25 cites·11 claims
- 0594US9000545B2Magnetic random access memoryKAJIYAMA TAKESHI·Filed 2011·Granted Apr 7, 2015·12 cites·18 claims
- 0694US7919826B2Magnetoresistive element and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Apr 5, 2011·22 cites·14 claims
- 0793US8022439B2Semiconductor device comprising gate electrode surrounding entire circumference of channel region and method for manufacturing the sameTOSHIBA KK·Filed 2009·Granted Sep 20, 2011·23 cites·13 claims
- 0893US7745894B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Jun 29, 2010·33 cites·20 claims
- 0992US8503216B2Resistance change type memoryKAJIYAMA TAKESHI·Filed 2010·Granted Aug 6, 2013·15 cites·20 claims
- 1091US8542519B2Semiconductor memory deviceASAO YOSHIAKI·Filed 2011·Granted Sep 24, 2013·15 cites·11 claims
- 1191US7205564B2Resistance change memory having organic semiconductor layerTOSHIBA KK·Filed 2004·Granted Apr 17, 2007·58 cites·16 claims
- 1290US8203193B2Magnetic random access memory and manufacturing method of the sameKAJIYAMA TAKESHI·Filed 2011·Granted Jun 19, 2012·8 cites·2 claims
- 1390US7821086B2Semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted Oct 26, 2010·22 cites·11 claims
- 1489US8941197B2Magnetic random access memoryKAJIYAMA TAKESHI·Filed 2012·Granted Jan 27, 2015·7 cites·6 claims
- 1589US8111540B2Semiconductor memory deviceASAO YOSHIAKI·Filed 2009·Granted Feb 7, 2012·22 cites·18 claims
- 1689US7629637B2Magnetic random access memory and write method thereofTOSHIBA KK·Filed 2008·Granted Dec 8, 2009·22 cites·20 claims
- 1787US8829580B2Magnetoresistive memory and manufacturing methodSUGIURA KUNIAKI·Filed 2010·Granted Sep 9, 2014·14 cites·6 claims
- 1887US8587042B2Magnetoresistive random access memory deviceKAJIYAMA TAKESHI·Filed 2010·Granted Nov 19, 2013·9 cites·19 claims
- 1986US6172898B1Semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Jan 9, 2001·28 cites·28 claims
- 2085US7741688B2Magnetic random access memory and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jun 22, 2010·9 cites·9 claims
- 2184US7064402B2Magnetic random access memoryTOSHIBA KK·Filed 2005·Granted Jun 20, 2006·8 cites·14 claims
- 2284US6909130B2Magnetic random access memory device having high-heat disturbance resistance and high write efficiencyTOSHIBA KK·Filed 2003·Granted Jun 21, 2005·35 cites·14 claims
- 2383US9263666B2Magnetic random access memoryTOSHIBA KK·Filed 2014·Granted Feb 16, 2016·3 cites·5 claims
- 2482US8009464B2Magnetic random access memory and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Aug 30, 2011·13 cites·13 claims
- 2582US7405962B2Magnetic random access memoryTOSHIBA KK·Filed 2006·Granted Jul 29, 2008·10 cites·12 claims
- 2680US8492830B2Multiple channel fin-FET and its manufacturing methodKAJIYAMA TAKESHI·Filed 2011·Granted Jul 23, 2013·5 cites·7 claims
- 2779US7061036B2Magnetic random access memory and a method for manufacturing thereofTOSHIBA KK·Filed 2004·Granted Jun 13, 2006·24 cites·16 claims
- 2878US9029943B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted May 12, 2015·3 cites·12 claims
- 2977US6927468B2Magnetic random access memoryTOSHIBA KK·Filed 2003·Granted Aug 9, 2005·24 cites·28 claims
- 3077US6653665B2Memory deviceTOSHIBA KK·Filed 2002·Granted Nov 25, 2003·22 cites·17 claims
- 3176US7848136B2Magnetic memoryTOSHIBA KK·Filed 2008·Granted Dec 7, 2010·2 cites·7 claims
- 3276US6906372B2Semiconductor device with vertical transistor formed in a silicon-on-insulator substrateTOSHIBA KK·Filed 2001·Granted Jun 14, 2005·22 cites·9 claims
- 3376US6807086B2Magnetic random access memoryTOSHIBA KK·Filed 2002·Granted Oct 19, 2004·17 cites·67 claims
- 3472US8208289B2Magnetoresistive effect elementKAJIYAMA TAKESHI·Filed 2009·Granted Jun 26, 2012·5 cites·8 claims
- 3569US8592928B2Magnetic random access memory and method of manufacturing the sameHOSOTANI KEIJI·Filed 2011·Granted Nov 26, 2013·2 cites·6 claims
- 3669US8081505B2Magnetoresistive element and method of manufacturing the sameKAJIYAMA TAKESHI·Filed 2009·Granted Dec 20, 2011·6 cites·5 claims
- 3769US7727778B2Magnetoresistive element and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 1, 2010·5 cites·12 claims
- 3869US6967864B2Semiconductor memory device including magneto resistive element and method of fabricating the sameTOSHIBA KK·Filed 2004·Granted Nov 22, 2005·10 cites·20 claims
- 3966US7141842B2Magnetic memory device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Nov 28, 2006·11 cites·10 claims
- 4066US6947314B2Magnetic random access memory and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Sep 20, 2005·12 cites·8 claims
- 4165US9190453B2Magnetic memory and manufacturing method thereofNAKAZAWA TAKASHI·Filed 2015·Granted Nov 17, 2015·1 cites·17 claims
- 4265US6861752B2Semiconductor device having wiring line with hole, and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Mar 1, 2005·11 cites·36 claims
- 4364US6760250B2Magnetic random access memoryTOSHIBA KK·Filed 2002·Granted Jul 6, 2004·11 cites·25 claims
- 4464US6617658B2Semiconductor memory device including magneto resistive elementTOSHIBA KK·Filed 2002·Granted Sep 9, 2003·7 cites·30 claims
- 4564US6525360B2Semiconductor device using a shallow trench isolationTOSHIBA KK·Filed 2000·Granted Feb 25, 2003·9 cites·30 claims
- 4661US6271081B2Semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Aug 7, 2001·14 cites·17 claims
- 4759US7262449B2MTJ element for magnetic random access memoryTOSHIBA KK·Filed 2004·Granted Aug 28, 2007·6 cites·14 claims
- 4858US8058080B2Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and templateKAJIYAMA TAKESHI·Filed 2010·Granted Nov 15, 2011·2 cites·13 claims
- 4957US7796422B2Magnetic random access memory and write method of the sameTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·3 cites·20 claims
- 5057US6984865B2Magnetic random access memoryTOSHIBA KK·Filed 2004·Granted Jan 10, 2006·4 cites·12 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →