Inventor · disambiguated record
Takeshi Kamigaichi
Also filed as: KAMIGAICHI TAKESHI
77 granted patents·15 pending applications·1,144 citations·filing 2001–2025
99Inventor score
Top patents by PatentIndex Score
92 records- 0199US8044448B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2009·Granted Oct 25, 2011·227 cites·7 claims
- 0299US7800163B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2008·Granted Sep 21, 2010·190 cites·11 claims
- 0398US8324680B2Non-volatile semiconductor storage device with laminated vertical memory cell and select transistorsIZUMI TATSUO·Filed 2011·Granted Dec 4, 2012·206 cites·11 claims
- 0497US7855457B2Stacked multilayer structure and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Dec 21, 2010·40 cites·13 claims
- 0597US7796439B2Semiconductor memory device and write method thereofTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·61 cites·22 claims
- 0696US9640547B2Stacked multilayer structure and manufacturing method thereofTOSHIBA KK·Filed 2016·Granted May 2, 2017·10 cites·20 claims
- 0796US7800091B2Nonvolatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Sep 21, 2010·37 cites·19 claims
- 0895US10043823B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Aug 7, 2018·6 cites·20 claims
- 0994US7049653B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2005·Granted May 23, 2006·18 cites·4 claims
- 1093US8711634B2Nonvolatile semiconductor memory device and method for controlling the sameFUTATSUYAMA TAKUYA·Filed 2011·Granted Apr 29, 2014·18 cites·20 claims
- 1193US8026546B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Sep 27, 2011·24 cites·10 claims
- 1292US10056333B2Stacked multilayer structure and manufacturing method thereofTOSHIBA MEMORY CORP·Filed 2017·Granted Aug 21, 2018·4 cites·21 claims
- 1392US9257388B2Stacked multilayer structure and manufacturing method thereofTOSHIBA KK·Filed 2014·Granted Feb 9, 2016·7 cites·14 claims
- 1492US7977733B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2009·Granted Jul 12, 2011·15 cites·17 claims
- 1592US6835978B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·43 cites·9 claims
- 1691US9831269B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Nov 28, 2017·4 cites·20 claims
- 1790US12356623B2Semiconductor deviceKIOXIA CORP·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 1890US7119413B2High-voltage transistor having shielding gateTOSHIBA KK·Filed 2004·Granted Oct 10, 2006·33 cites·5 claims
- 1989US8885411B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2013·Granted Nov 11, 2014·10 cites·20 claims
- 2089US7939406B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2009·Granted May 10, 2011·9 cites·19 claims
- 2188US9917096B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2015·Granted Mar 13, 2018·6 cites·11 claims
- 2288US8742586B2Stacked multilayer structure and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Jun 3, 2014·4 cites·17 claims
- 2388US8395922B2Semiconductor memory deviceNOGUCHI MITSUHIRO·Filed 2011·Granted Mar 12, 2013·13 cites·23 claims
- 2488US8314455B2Non-volatile semiconductor storage deviceSHIINO YASUHIRO·Filed 2011·Granted Nov 20, 2012·9 cites·11 claims
- 2588US7573092B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Aug 11, 2009·9 cites·15 claims
- 2688US2025294760A1Semiconductor deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 2787US7902023B2Method of manufacturing non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2010·Granted Mar 8, 2011·8 cites·9 claims
- 2886US7671475B2Nonvolatile semiconductor memory having a word line bent towards a select gate line sideTOSHIBA KK·Filed 2007·Granted Mar 2, 2010·11 cites·7 claims
- 2985US12004352B2Semiconductor deviceKIOXIA CORP·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 3085US9524982B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Dec 20, 2016·2 cites·20 claims
- 3185US8237218B2Nonvolatile semiconductor memory device and method of manufacturing the sameMURATA TAKESHI·Filed 2011·Granted Aug 7, 2012·7 cites·6 claims
- 3283US8664108B2Stacked multilayer structure and manufacturing method thereofMIZUKAMI MAKOTO·Filed 2010·Granted Mar 4, 2014·3 cites·6 claims
- 3383US7352027B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Apr 1, 2008·6 cites·21 claims
- 3483US7244984B2Nonvolatile semiconductor memory including two memory cell columns sharing a single bit lineTOSHIBA KK·Filed 2004·Granted Jul 17, 2007·26 cites·13 claims
- 3582US11716852B2Semiconductor deviceKIOXIA CORP·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 3682US7449745B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Nov 11, 2008·5 cites·9 claims
- 3781US7369439B2Semiconductor integrated circuit device having nonvolatile semiconductor memory and programming method thereofTOSHIBA KK·Filed 2006·Granted May 6, 2008·7 cites·12 claims
- 3881US7348627B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Mar 25, 2008·5 cites·12 claims
- 3979US7825439B2Semiconductor memoryTOSHIBA KK·Filed 2008·Granted Nov 2, 2010·6 cites·18 claims
- 4078US11444102B2Semiconductor deviceKIOXIA CORP·Filed 2021·Granted Sep 13, 2022·0 cites·20 claims
- 4177US8253188B2Semiconductor storage device and method for manufacturing the sameKAMIGAICHI TAKESHI·Filed 2010·Granted Aug 28, 2012·5 cites·14 claims
- 4277US2021391344A1High-voltage transistor having shielding gateTOSHIBA MEMORY CORP·Filed 2021·Application pending·0 cites
- 4376US10170489B2High-voltage transistor having shielding gateTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 1, 2019·1 cites·17 claims
- 4473US10608009B2Peripheral structure for NAND flash memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 31, 2020·2 cites·7 claims
- 4573US9865614B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2015·Granted Jan 9, 2018·2 cites·18 claims
- 4672US10861789B2Manufacturing method of stacked multilayer structureTOSHIBA MEMORY CORP·Filed 2019·Granted Dec 8, 2020·0 cites·17 claims
- 4772US6927449B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2004·Granted Aug 9, 2005·9 cites·9 claims
- 4871US9590052B2High-voltage transistor having shielding gateTOSHIBA KK·Filed 2014·Granted Mar 7, 2017·1 cites·44 claims
- 4970US10964719B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 5070US7906816B2Semiconductor integrated circuit device including memory cells having floating gates and resistor elementsTOSHIBA KK·Filed 2006·Granted Mar 15, 2011·3 cites·23 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Takeshi Kamigaichi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →