Inventor · disambiguated record
Ta-Yuan Kung
Also filed as: KUNG TA-YUAN
14 granted patents·6 pending applications·10 citations·filing 2016–2025
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20
Top patents by PatentIndex Score
20 records- 0195US12237323B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 25, 2025·2 cites·20 claims
- 0291US9831340B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·6 cites·16 claims
- 0381US10985256B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 0477US12211935B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 0575US2025169191A1Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0674US11916060B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 0774US11715734B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 0874US2024379789A1Transistor device with recessed gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0971US11508845B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 1071US10686047B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1170US12176407B2Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer withinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 1270US11538914B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 1358US10847652B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 24, 2020·0 cites·20 claims
- 1458US2025275166A1Semiconductor device and method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1556US2024379791A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1656US2024258373A1Transistor device having a gate setback from a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1755US2024379845A1Transistor structure and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1849US11444169B2Transistor device with a gate structure having recesses overlying an interface between isolation and device regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1948US11393809B2Semiconductor device having improved electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
- 2043US10164037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →