Inventor · disambiguated record
Takeo Maeda
Also filed as: MAEDA TAKEO · MATSUDA YASUO · NAKAGAWA YUJI
36 granted patents·1 pending application·682 citations·filing 1974–2014
98Inventor score
Top patents by PatentIndex Score
37 records- 0192US4336475ASlotless brushless motorHITACHI LTD·Filed 1979·Granted Jun 22, 1982·52 cites·12 claims
- 0287US5506168AMethod for manufacturing semiconductor deviceTOSHIBA KK·Filed 1994·Granted Apr 9, 1996·89 cites·1 claims
- 0378US4643777AMethod of manufacturing a semiconductor device comprising resistors of high and low resistancesTOSHIBA KK·Filed 1984·Granted Feb 17, 1987·28 cites·12 claims
- 0477US5278099AMethod for manufacturing a semiconductor device having wiring electrodesTOSHIBA KK·Filed 1992·Granted Jan 11, 1994·56 cites·12 claims
- 0577US5091760ASemiconductor deviceTOSHIBA KK·Filed 1990·Granted Feb 25, 1992·32 cites·31 claims
- 0673US4900257AMethod of making a polycide gate using a titanium nitride capping layerTOSHIBA KK·Filed 1988·Granted Feb 13, 1990·29 cites·9 claims
- 0773US4663825AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1985·Granted May 12, 1987·26 cites·4 claims
- 0872US4012679AMethod and apparatus for controlling the operation of synchronous motorHITACHI LTD·Filed 1975·Granted Mar 15, 1977·18 cites·6 claims
- 0971US4384248AMethod and apparatus for detecting shortcircuit in arm of GTO inverterHITACHI LTD·Filed 1980·Granted May 17, 1983·25 cites·6 claims
- 1071US4099108AVariable speed control apparatus for induction motorHITACHI LTD·Filed 1976·Granted Jul 4, 1978·17 cites·8 claims
- 1170US5512772ASemiconductor device having bipolar transistor and MOS transistorTOSHIBA KK·Filed 1994·Granted Apr 30, 1996·27 cites·9 claims
- 1270US3997825AMethod and apparatus for controlling synchronous motorHITACHI LTD·Filed 1974·Granted Dec 14, 1976·17 cites·9 claims
- 1370US3939387AVariable frequency power converter for ac motor driveHITACHI LTD·Filed 1974·Granted Feb 17, 1976·16 cites·7 claims
- 1468US4931407AMethod for manufacturing integrated bipolar and MOS transistorsTOSHIBA KK·Filed 1988·Granted Jun 5, 1990·24 cites·11 claims
- 1568US4173193AControlling apparatus for electric sewing machineHITACHI LTD·Filed 1978·Granted Nov 6, 1979·20 cites·7 claims
- 1664US5576572ASemiconductor integrated circuit device and method of manufacturing the sameTOSHIBA KK·Filed 1994·Granted Nov 19, 1996·25 cites·9 claims
- 1763US5442226ABipolar transistor having an emitter electrode formed of polysiliconTOSHIBA KK·Filed 1993·Granted Aug 15, 1995·24 cites·10 claims
- 1859US5677229AMethod for manufacturing semiconductor device isolation regionTOSHIBA KK·Filed 1995·Granted Oct 14, 1997·22 cites·20 claims
- 1959US4540500ALow temperature sinterable oxide magnetic materialFUJI ELECTROCHEMICAL CO LTD·Filed 1983·Granted Sep 10, 1985·17 cites·5 claims
- 2054US5091322ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1990·Granted Feb 25, 1992·16 cites·15 claims
- 2151US4769337AMethod of forming selective polysilicon wiring layer to source, drain and emitter regions by implantation through polysilicon layerTOSHIBA KK·Filed 1987·Granted Sep 6, 1988·11 cites·7 claims
- 2251US4194919AMethod for increasing flexural strength of cement compositionsKAO CORP·Filed 1978·Granted Mar 25, 1980·12 cites·8 claims
- 2348US2015113391A1Document processing system, document processing method and storage mediumSKK LTD·Filed 2014·Application pending·0 cites
- 2446US5489795ASemiconductor integrated circuit device having double well structureTOSHIBA KK·Filed 1994·Granted Feb 6, 1996·16 cites·6 claims
- 2545US5340751AMethod of manufacturing a BiMOS deviceTOSHIBA KK·Filed 1991·Granted Aug 23, 1994·8 cites·4 claims
- 2643US4156899ACurrent source inverterHITACHI LTD·Filed 1977·Granted May 29, 1979·7 cites·18 claims
- 2742US5583363AInverter gate circuit of a bi-CMOS structure having common layers between fets and bipolar transistorsTOSHIBA KK·Filed 1992·Granted Dec 10, 1996·9 cites·1 claims
- 2842US5406115ASemiconductor device including bipolar transistor having shallowed base and method for manufacturing the sameTOSHIBA KK·Filed 1993·Granted Apr 11, 1995·8 cites·10 claims
- 2937US5075752ABi-cmos semiconductor device having memory cells formed in isolated wellsTOSHIBA KK·Filed 1990·Granted Dec 24, 1991·5 cites·23 claims
- 3035US5399894ASemiconductor device having bipolar transistor and MOS transistorTOSHIBA KK·Filed 1992·Granted Mar 21, 1995·4 cites·14 claims
- 3133US5523242AMethod of manufacturing a BiMOS deviceTOSHIBA KK·Filed 1994·Granted Jun 4, 1996·2 cites·1 claims
- 3233US5485034ASemiconductor device including bipolar transistor having shallowed baseTOSHIBA KK·Filed 1994·Granted Jan 16, 1996·3 cites·5 claims
- 3333US5341021ABipolar transistor having an electrode structure suitable for integrationTOSHIBA KK·Filed 1992·Granted Aug 23, 1994·3 cites·10 claims
- 3433US5243557ABi-CMOS semiconductor integrated circuitTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·4 cites·12 claims
- 3532US5597757AMethod of manufacturing a semiconductor device including bipolar and MOS transistorsTOSHIBA KK·Filed 1995·Granted Jan 28, 1997·3 cites·6 claims
- 3631US5014106ASemiconductor device for use in a hybrid LSI circuitTOSHIBA KK·Filed 1990·Granted May 7, 1991·5 cites·24 claims
- 3729US5093707ASemiconductor device with bipolar and cmos transistorsTOSHIBA KK·Filed 1989·Granted Mar 3, 1992·2 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →