Inventor · disambiguated record
Tal Margalith
Also filed as: MARGALITH TAL
11 granted patents·5 pending applications·91 citations·filing 2002–2021
87Inventor score
Files withUNIV CALIFORNIA8CRAVEN MICHAEL D2KONINKL PHILIPS ELECTRONICS NV2KRAMES MICHAEL R2CHAKRABORTY ARPAN1
Top patents by PatentIndex Score
16 records- 0195US7091514B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2003·Granted Aug 15, 2006·70 cites·9 claims
- 0289US8188458B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesCRAVEN MICHAEL D·Filed 2011·Granted May 29, 2012·7 cites·21 claims
- 0383US8062916B2Series connected flip chip LEDs with growth substrate removedKRAMES MICHAEL R·Filed 2008·Granted Nov 22, 2011·7 cites·18 claims
- 0476US8911518B1Method and system for dicing substrates containing gallium and nitrogen material with conductive core via structuresCHAKRABORTY ARPAN·Filed 2012·Granted Dec 16, 2014·2 cites·13 claims
- 0572US11411137B2III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layersUNIV CALIFORNIA·Filed 2017·Granted Aug 9, 2022·2 cites·14 claims
- 0667US7982208B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2006·Granted Jul 19, 2011·1 cites·26 claims
- 0765US8450754B2Series connected flip chip LEDs with growth substrate removedKRAMES MICHAEL R·Filed 2011·Granted May 28, 2013·1 cites·19 claims
- 0862US2022181513A1Hybrid growth method for iii-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 0959US7977132B2Extension of contact pads to the die edge via electrical isolationKONINKL PHILIPS ELECTRONICS NV·Filed 2009·Granted Jul 12, 2011·1 cites·16 claims
- 1054US2012205623A1NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICESCRAVEN MICHAEL D·Filed 2012·Application pending·0 cites
- 1151US11217722B2Hybrid growth method for III-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2016·Granted Jan 4, 2022·0 cites·20 claims
- 1251US2022239068A1Iii-nitride-based vertical cavity surface emitting laser (vcsel) configurationsUNIV CALIFORNIA·Filed 2020·Application pending·0 cites
- 1348US2011018013A1Thin-film flip-chip series connected ledsKONINKL PHILIPS ELECTRONICS NV·Filed 2009·Application pending·0 cites
- 1442US10685835B2III-nitride tunnel junction with modified P-N interfaceUNIV CALIFORNIA·Filed 2016·Granted Jun 16, 2020·0 cites·19 claims
- 1541US12484347B2Method of forming micro-LEDs with ultra-low leakage currentUNIV CALIFORNIA·Filed 2019·Granted Nov 25, 2025·0 cites·13 claims
- 1637US2003180980A1Implantation for current confinement in nitride-based vertical optoelectronicsFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →