Inventor · disambiguated record
Taehwan Moon
Also filed as: MOON TAEHWAN
19 granted patents·15 pending applications·10 citations·filing 2020–2024
89Inventor score
Files withSAMSUNG ELECTRONICS CO LTD34
Top patents by PatentIndex Score
34 records- 0196US11145731B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 12, 2021·6 cites·25 claims
- 0292US11862705B2Electronic devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 2, 2024·2 cites·21 claims
- 0390US11996150B2Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 28, 2024·2 cites·28 claims
- 0478US12206009B2Electronic devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·19 claims
- 0578US11984514B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 0676US12107140B2Thin film structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 0776US2024266445A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0876US2024265967A1Non-volatile content addressable memory device having simple cell configuration and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0974US11699765B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·25 claims
- 1074US2025176259A1Complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1174US2025142936A1Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1273US12382644B2Thin film structure including dielectric material layer and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·4 claims
- 1371US12283629B2Ferroelectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1469US12453106B2Capacitor device and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·17 claims
- 1569US11848366B2Electronic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1668US12218217B2Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·26 claims
- 1768US11456351B2Thin film structure including dielectric material layer and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 27, 2022·0 cites·28 claims
- 1867US11646375B2Ferroelectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 9, 2023·0 cites·26 claims
- 1966US11804536B2Thin film structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·43 claims
- 2060US12266710B2Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 1, 2025·0 cites·25 claims
- 2160US12205951B2Complementary metal oxide semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·24 claims
- 2259US2024015983A1Three-dimensional ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2358US2023397432A1Method device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2456US12087840B2Semiconductor device and capacitor including hydrogen-incorporated oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·16 claims
- 2555US2023267995A1Ferroelectric field effect transistor, neural network apparatus, and electronic apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2654US11978798B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 2753US2023267320A1Ferroelectric field effect transistor, neural network apparatus, and electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2853US2023180481A1Vertical non-volatile memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2953US2023275150A1Semiconductor device including ferroelectric material and electronic device including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3051US2023068904A1Electronic device including ferroelectric thin film structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3148US2024008289A13d ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3248US2022140104A1Semiconductor device and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 3346US2021313439A1Electronic device including ferroelectric layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 3445US2023186086A1Neural network device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →